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Siratun Nabi Sirat
Notre Dame TFET Model
25 Aug 2017 | Compact Models | Contributor(s):
By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1
1. University of Notre Dame 2. Norwegian University of Science and Technology
Notre Dame TFET compact model version 2.1.0.
MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Compact Models | Contributor(s):
By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1
1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)
We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...
Is screening length in tunneling probability equation actually the tunneling barrier length?
Closed | Responses: 1
Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...
15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
Bhagwan Ram Raad
A UCSD analytic TFET model
18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...
Inter-band Tunnel Transistors: Opportunities and Challenges
30 Oct 2015 | | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
Design and simulation of GaSb/InAs 2D Transmission enhanced TFET
10 Oct 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Universal TFET model
23 Jan 2015 | Compact Models | Contributor(s):
A universal TFET compact model implemented in verilog-A
Praveen C S
Tunnel FET Learning Tutorial
05 Mar 2014 | | Contributor(s):: Mark Cheung
This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.