Tags: TFET

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  1. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface...

    https://nanohub.org/publications/181/?v=1

  2. Is screening length in tunneling probability equation actually the tunneling barrier length?

    Closed | Responses: 0

    Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...

    https://nanohub.org/answers/question/1858

  3. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

    01 Nov 2016 | Online Presentations | Contributor(s): Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

    IWCE 2015 presentation.

    https://nanohub.org/resources/25133

  4. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

    22 Sep 2016 | Online Presentations | Contributor(s): Jamie Teherani

    Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however,...

    https://nanohub.org/resources/24982

  5. Bhagwan Ram Raad

    https://nanohub.org/members/147680

  6. Achintya Priydarshi

    https://nanohub.org/members/145038

  7. A UCSD analytic TFET model

    18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...

    https://nanohub.org/resources/23350

  8. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

    https://nanohub.org/resources/23000

  9. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    10 Oct 2015 | Online Presentations | Contributor(s): Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

    https://nanohub.org/resources/22876

  10. Universal TFET model

    23 Jan 2015 | Compact Models | Contributor(s):

    By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1

    1. University of Notre Dame 2. Norwegian University of Science and Technology

    A universal TFET compact model implemented in verilog-A

    https://nanohub.org/publications/31/?v=1

  11. raja j

    https://nanohub.org/members/113606

  12. Praveen C S

    https://www.linkedin.com/profile/view?id=154256162&trk=nav_responsive_tab_profile

    https://nanohub.org/members/109012

  13. Ozgur Polat

    https://nanohub.org/members/104542

  14. Gopinath S

    An research student

    https://nanohub.org/members/100640

  15. Tunnel FET Learning Tutorial

    05 Mar 2014 | Presentation Materials | Contributor(s): Mark Cheung

    This module covers: Field-effect transistor (FET) review, Motivation for TFET, Device design and simulation, Literature review, Simulation results

    https://nanohub.org/resources/20375

  16. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    https://nanohub.org/resources/18723

  17. Trevin Gandhi

    https://nanohub.org/members/72030

  18. Vivek Asthana

    https://nanohub.org/members/49925

  19. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...

    https://nanohub.org/resources/9283

  20. Junzhe Geng

    Junzhe Geng is a graduate student in professor Gerhard Klimeck’s research group at Purdue Unviersity. He obtained his Bachelor’s degree in electrical engineering from Purdue in 2010....

    https://nanohub.org/members/35479