All Categories (1-7 of 7)

1. 

   Maria del Carmen Ley-Flores

   https://nanohub.org/members/121070

2. 

   Justin Wolfe

   https://nanohub.org/members/73781

3. On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films

   02 Feb 2012 | | Contributor(s):: Brian Demczyk

   Utilizing a model adapted from classical nucleation theory [8], we calculate a "critical thickness" for island formation, taking into account the surfaceenergies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium...

4. InAlAs growth method

   Q&A|Closed | Responses: 0

   Does anyone have a good idea of the approximate conditions for InAlAs thin film (< 50 nm) growth by MBE? ...

   https://nanohub.org/answers/question/933

5. 

   Kevin Grossklaus

   I am a graduate research assistant at the University of Michigan- Ann Arbor, working in the Millunchick group. My research exams ion irradiation effects on III-V semiconductor film growth, ion beam...

   https://nanohub.org/members/60848

6. Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

   07 Oct 2011 | | Contributor(s):: Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao

   Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.

7. 

   Faruk BALLIPINAR

   https://nanohub.org/members/58514