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Electronic Structure Theory of Dilute Impurity Alloys: GaBiP and GaBiAs
18 Jan 2013 | | Contributor(s):: M. Usman
We report an atomistic model established for electronic structure calculations of GaBiAs (0 < Bi < 12%) alloys based on empirical tight binding parameters. Alloy supercells consisting of 1000 and 8000 atoms are relaxed using valence force field (VFF) method, including anharmonic corrections to...
Quantum Dot based Photonic Devices
01 Apr 2012 | | Contributor(s):: Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region ofphotonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.for the next generation communication systems offers unique characteristics such astemperature-insensitivity, high...