-
Boltzmann statistics does not work
Q&A|Open | Responses: 2
I tried baltzmann statistics for QM or SC. Both did not work.
Could you please fix it?
Thank you
https://nanohub.org/answers/question/1160
-
Can i use it for graphene FET simulation to calculate potential distribution in one dimension?
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/1207
-
Exactly same subband energies for 2 ladders
Q&A|Closed | Responses: 1
I am simulating DG MOSCAP with Metal gates.
Doping-7e18
Metal1 and 2 WF – 4.3eV
Voltage – 0 to 4 V
https://nanohub.org/answers/question/617
-
How do you perform a simulation of a MOS capacitor ON SOI using the Schred tool?
Q&A|Open | Responses: 1
How do you perform a simulation of a MOS capacitor ON SOI using the Schred tool? The manual says it’s possible but I find when I click “launch tool”, the only options for...
https://nanohub.org/answers/question/40
-
How to find Vox = f(Vg)
Q&A|Closed | Responses: 0
I used this SHRED before to generate Vox=f(Vg)of a MOS, as Vg is swept from -V to +V, but am struggling to find the way of how to do it with this new interface.
thanks,
Huy
https://nanohub.org/answers/question/1006
-
How to simulate DGMOS with schred 2.0 tool?
Q&A|Open | Responses: 1
https://nanohub.org/answers/question/709
-
I am confused regarding the Material Parameter Inputs. The notation in the input deck is extremely confusing.
Q&A|Closed | Responses: 1
The input deck has mx_3valleys (valley 1, valley 2, valley 3), my_3valleys (valley 1, valley 2, valley 3), mz_3valleys (valley 1, valley 2, valley 3), mhh_3valleys (valley 1, valley 2, valley...
https://nanohub.org/answers/question/1294
-
Including bulk doping when simulating QM accumulation capacitance in Schred V1
Q&A|Closed | Responses: 1
Through examination of the source code I have figured out that I need to use the “accumula=yes” flag in the “calc” section of the input file to get Schred V1 to include...
https://nanohub.org/answers/question/1097
-
Input file syntax for Schred V2
Q&A|Open | Responses: 1
I have downloaded and compiled the source code for versions 1 and 2 of Schred. However, I am having trouble finding information on the input file syntax for version 2. The...
https://nanohub.org/answers/question/1066
-
Parameters for GaAs
Q&A|Closed | Responses: 2
I just wondering the parameters or the refernce for calculation of GaAs in Schred.
Including the orientation,...
https://nanohub.org/answers/question/791
-
SCHRED Compilation
Q&A|Closed | Responses: 2
I would appreciate if somebody gives me instruction for SCHRED compilation in windows.
I also have an ORACLE Virtualbox and I could compile it there, if I knew how.
Thanks in advance.
Lui
https://nanohub.org/answers/question/1172
-
Schred for non uniform doping?
Q&A|Open | Responses: 1
Is there support for non uniform doping profile for Schred? I’m interested in using inverse modeling of CV to extract the doping profile. I have a situation of a very shallow N+ region...
https://nanohub.org/answers/question/151
-
schred running ok?
Q&A|Closed | Responses: 0
The CV for very thin oxide (considering only G vs considering GLX) on GaAs seems to be exactly similar. Which is...
https://nanohub.org/answers/question/387
-
Schred v1: other materials
Q&A|Closed | Responses: 1
In Schred V1 there is an option for “other” materials. When this is selected I can input effective masses and band offsets.
How is this different from Schred V2, which asks...
https://nanohub.org/answers/question/1169
-
Schred V2: Simulating n-type substrates and Vfb determination
Q&A|Closed | Responses: 1
Using the compiled Schred V2 code and supplied sample input files I am able to successfully model structures with a uniformly doped p-type Si substrate. I assume that to model an n-type...
https://nanohub.org/answers/question/1068
-
schred-1.0 does not account for doping/Temp effects on VFB in DG
Q&A|Closed | Responses: 0
I do not noticeable changes when using intrinsic 1E10cm-3 or heavily doped 1E18cm-3 in simulation of metal-DG structures. The same happens when changing temprerature
I would excpect...
https://nanohub.org/answers/question/1650
-
simulating InAs in Schred V1 vs V2
Q&A|Open | Responses: 1
In version 2, I tried the following parameters for InAs:
L-valley energy offset: 0.73
X-valley...
https://nanohub.org/answers/question/1168
-
x5 larger Ctot than Cox in QM schred V2
Q&A|Open | Responses: 2
Hello,
I found that the QM with Fermi-statistics in Schred V2 gives five times larger Ctot than Cox when I have tox=0.73 nm and NA=7e18 (and other parameters as defaults except I changed...
https://nanohub.org/answers/question/1164
-
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
-
Can Schred treat the wave function penetration in to the oxide?
Q&A|Open | Responses: 1
In case of ultra-scaled device, the impact of wave function penetrateion on the invertion charge and Vt is increasing (Ref M. Kauser, et.al., in IEEE TED 49, 693 (2002)). Can...
https://nanohub.org/answers/question/1832