Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Online Presentations (1-20 of 176)

  1. Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach

    30 Aug 2017 | | Contributor(s):: Rajib Rahman

    In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...

  2. Directing Crystallization and Assembly for Printed Electronics

    19 Dec 2016 | | Contributor(s):: Ying Diao

    Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using energy-efficient and high-throughput methods. The solution printability at near ambient conditions enables...

  3. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  4. Multiscale Modeling of Graphene-Metal Contacts

    01 Feb 2016 | | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone

    IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...

  5. RF Solid-State Vibrating Transistors

    15 Feb 2014 | | Contributor(s):: Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  6. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

  7. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  8. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  9. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | | Contributor(s):: Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  10. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    02 Jun 2013 | | Contributor(s):: Xiuling Li

  11. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  12. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

  13. Engineering Disorder in Opto-Electronics

    05 Dec 2012 | | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  14. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  18. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  19. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

    17 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  20. ECE 606 Lecture 19: Bipolar Transistors Design

    17 Nov 2012 | | Contributor(s):: Gerhard Klimeck