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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
2010 Honorary Symposium for Professor Milton Feng at The Micro and Nano Technology Laboratory UIUC
23 Jul 2010 | Series | Contributor(s): Rashid Bashir, Andreas Cangellaris, Omar N Sobh
Symposium honoring Professor Milton Feng on his 60th birthday.
Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device...
WALLA Lecture: Electronics, Microelectronics and Nanoelectronics
06 May 2010 | Online Presentations | Contributor(s): Mark Lundstrom
The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in...
Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
ECET 499N Lecture 5a: Nanoelectronics III - Datta Lecture Review
19 Feb 2010 | Online Presentations | Contributor(s): Helen McNally
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | Teaching Materials | Contributor(s): Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.
Taxonomy of spintronics (a zoo of devices)
5.0 out of 5 stars
01 Dec 2009 | Online Presentations | Contributor(s): Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a)...
Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
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21 Sep 2009 | Online Presentations | Contributor(s): Andrei Kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors...
ECE 495N F08 Exam 2 (Practice)
08 Jul 2009 | Teaching Materials | Contributor(s): Supriyo Datta
ECE 495N F08 Exam 2
ECE 495N F08 Final Exam (Practice)
ECE 495N F08 Final Exam
ECE 495N F08 Exam 1 (Practice)
ECE 495N F08 Exam 1
ECE 495N F08 Homework 6 (Lectures 22-25)
ECE 495N F08 Homework 7 (Lectures 26-31)
ECE 495N F08 Homework 8 (Lectures 32-35)
ECE 495N F08 Homework 9 (Lectures 36-41)