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ECE 606 L27.1: Heterojunction Bipolar Transistor - Applications, Concept, Innovation, Nobel Prize
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.2: Heterojunction Bipolar Transistor - Heterojunction Equilibrium Solution
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.4: Heterojunction Bipolar Transistor - Abrupt Junction HBTs
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.6: Heterojunction Bipolar Transistor - Graded Base HBTs
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.7: Heterojunction Bipolar Transistor - Double Heterojunction HBTs
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L27.8: Heterojunction Bipolar Transistor - Modern Designs
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L30.4: MOSFET Introduction - Comments on Bulk Charge Theory & Small Transistors
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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Opening Remarks & Transistors in the 1950s
02 Feb 2023 | | Contributor(s):: Mark Lundstrom
Opening Remarks by Mark Lundstrom and recorded message by US Senator Todd Young.
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The Transistor at 75
02 Feb 2023 | | Contributor(s):: Mark Lundstrom, Michael J. Manfra, Muhammad A. Alam, Ekaterina Babintseva
Purdue celebrates the 75th anniversary of the invention of the transistor.
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Birth of the Transistor: Bell Labs, Purdue, and the Second World War
02 Feb 2023 | | Contributor(s):: Michael J. Manfra
Semiconductors at Purdue in the 1940’s and the invention of the transistor at Bell Labs.
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From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World
02 Feb 2023 | | Contributor(s):: Muhammad A. Alam
The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.
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Computers in Space: Transistors in the Age of Apollo
02 Feb 2023 | | Contributor(s):: Ekaterina Babintseva
The role of transistors in the race to the moon.
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Fractionalization of Charge and Statistics in Two Dimensions
14 Dec 2022 | | Contributor(s):: Michael J. Manfra
This lecture will focus on the development of experiments that allow the first direct observation of anyonic braiding statistics in the fractional quantum Hall regime. The connection between development of new theoretical concepts and the behavior of a humble transistor will be emphasized.
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ABACUS Bipolar Junction Transistors (Spring 2022)
08 Jun 2022 | | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries....
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Organic-Perovskite Hybrid Quantum Wells, Heterostructure, and Optoelectronics
17 Feb 2022 | | Contributor(s):: Letian Dou
I will present a molecular approach to the synthesis of a new family of organic-inorganic hybrid perovskite quantum wells incorporating widely tunable organic semiconducting building blocks.
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Fundamentals of Nanotransistors
30 Jan 2022 | | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
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ABACUS Bipolar Junction Transistors (Winter 2021)
25 Jan 2022 | | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...
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What's the mobility?
08 Sep 2021 | | Contributor(s):: Eric Pop
This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...
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IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys
25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth
In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.