Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

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  1. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

  2. Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach

    30 Aug 2017 | | Contributor(s):: Rajib Rahman

    In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...

  3. Alex Boehmke

    https://nanohub.org/members/175833

  4. Directing Crystallization and Assembly for Printed Electronics

    19 Dec 2016 | | Contributor(s):: Ying Diao

    Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using energy-efficient and high-throughput methods. The solution printability at near ambient conditions enables...

  5. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  6. Multiscale Modeling of Graphene-Metal Contacts

    01 Feb 2016 | | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone

    IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...

  7. Sun

    https://nanohub.org/members/127172

  8. Hybrid CMOS/SET models for PSpice?

    Closed | Responses: 0

    Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!

    https://nanohub.org/answers/question/1404

  9. RF Solid-State Vibrating Transistors

    15 Feb 2014 | | Contributor(s):: Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  10. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | | Contributor(s):: Jun Huang

    PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

  11. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  12. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

  13. Kevin Manning

    https://nanohub.org/members/92250

  14. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  15. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | | Contributor(s):: Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  16. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  17. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  18. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  19. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    02 Jun 2013 | | Contributor(s):: Xiuling Li

  20. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck