Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

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  1. ECE 606 Lecture 8: Density of States

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions

  2. ECE 606 Lecture 7: Energy Bands in Real Crystals

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:E-k diagram/constant energy surfaces in 3D solidsCharacterization of E-k diagram: BandgapCharacterization of E-k diagram: Effective MassConclusions

  3. ECE 606 Lecture 5: Energy Bands

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Schrodinger equation in periodic U(x)Bloch theoremBand structureProperties of electronic bandsConclusions

  4. ECE 606 Lecture 6: Energy Bands (continued)

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Properties of electronic bandsE-k diagram and constant energy surfacesConclusions

  5. ECE 606 Lecture 4: Solution of Schrodinger Equation

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Time-independent Schrodinger EquationAnalytical solution of toy problemsBound vs. tunneling statesConclusionsAdditional Notes: Numerical solution of Schrodinger Equation

  6. ECE 659 Lecture 8: Scattering Theory of Transport

    03 Feb 2009 | | Contributor(s):: Supriyo Datta

  7. ECE 659 Lecture 7: Hall Effect II

    03 Feb 2009 | | Contributor(s):: Supriyo Datta

  8. ECE 659 Lecture 6: Hall Effect I

    03 Feb 2009 | | Contributor(s):: Supriyo Datta

  9. ECE 606 Lecture 3: Elements of Quantum Mechanics

    28 Jan 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Why do we need quantum physicsQuantum conceptsFormulation of quantum mechanicsConclusions

  10. ECE 606 Lecture 2: Geometry of Periodic Crystals

    28 Jan 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Volume & surface issues for BCC, FCC, Cubic latticesImportant material systemsMiller indices ConclusionsHelpful software tool: Crystal Viewer in the ABACUS tool suite.

  11. ECE 606 Lecture 1: Introduction

    28 Jan 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Course information Current flow in semiconductors Types of material systems Classification of crystals

  12. ECE 659 Quantum Transport: Atom to Transistor

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

    Spring 2009This is a newly produced version of the course that wasformerly available.We would greatly appreciate your feedback regarding the new format and contents.Traditionally atomistic approaches have been used to model materials in terms of average parameters like the mobility or the...

  13. ECE 659 Lecture 5: Where is the Resistance?

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

  14. ECE 659 Lecture 4: Landauer Model

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

  15. ECE 659 Lecture 1: Introduction

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  16. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  17. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  18. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    15 Dec 2008 | | Contributor(s):: Mark Lundstrom

  19. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  20. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.