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Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions
Quantum and Thermal Effects in Nanoscale Devices
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18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
Nanoelectronics and the meaning of resistance: Course Handout and Exercises
02 Sep 2008 | | Contributor(s):: Supriyo Datta
Handout with reference list, MATLAB scripts and exercise problems.
Lecture 4A: Energy Exchange and Maxwell's Demon
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
Lecture 1A: What and where is the resistance?
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Lecture 1B: What and where is the resistance?
Lecture 2A: Quantum Transport
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...
Lecture 2B: Quantum Transport
Lecture 3A: Spin Transport
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
Lecture 3B: Spin Transport
Lecture 4B: Energy Exchange and Maxwell’s Demon
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a “Landauer-like picture” where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
Lecture 5A: Correlations and Entanglement
Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...
Lecture 5B: Correlations and Entanglement
Nanoelectronics and the Meaning of Resistance
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Finite Height Quantum Well: an Exercise for Band Structure
31 Jan 2008 | | Contributor(s):: David K. Ferry
Use the Resonant Tunneling Diodes simulation tool on nanoHUB to explore the effects of finite height quantum wells.Looking at a 2 barrier device, 300 K, no bias, other standard variables, and 3 nm thick barriers and a 7 nm quantum well, determine the energies of the two lowest quasi-bound states.