|Version 4 (modified by mmc, 8 years ago) (diff)|
CGTB: Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
Welcome to the CGTB development area. This project is for people actively developing source code and documentation for this tool.
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What is CGTB?
CGTB is an interactive tool for computing the charge density distribution and potential variation inside a MOS structure. A full tight binding description of the silicon atoms is coarse-grained to a 1-D tight binding description by using the periodicity of the electronic properties in the planes parallel to the dielectric layer. In the CGTB rapture tool, the user can specify the applied potential on the metal layer and the gap of between the silicon structure and the metal layer (i.e., the thickness of the dielectric layer). The charge density and potential profiles in the MOS structure are computed and plotted.
How do I use this site?
You can edit any of the pages in this site and add information. For more instructions, see: