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Modeling Interface-defect Generation: Tool Information Page


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Ahmad Ehteshamul Islamaeislam
Haldun Kufluoglukufluogl
Muhammad Ashraful AlamProfessor, ECE, Purdue University

At a Glance

Analyzes device reliability based on NBTI


MIG contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of SiH bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (~ timen) formula.

Implementing such Reaction-diffusion (RD) model, MIG shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures.

Related Resources


Dhanoop VargheseExperiment
Souvik MahapatraExperiment

This work was supported by NCN, NSF, SRC.


If you are using the tool for any publication, we request that you cite:

  1. "A Comprehensive Model for PMOS NBTI Degradation," M. A. Alam and S. Mahapatra, Special Issue of Journal of Microelectronics Reliability (Invited), 45(1), pp. 71-81,(2005).
  2. "Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation", IEEE Trans. on Elec. Dev., vol. 54, no. 9, pp. 2143-2154 (2007).
  3. Simulations were performed by MIG at