|Version 3 (modified by mohamed, 7 years ago) (diff)|
Low Field Mobility: Calculates low field mobility in III-V semiconductors
What is Low Field Mobility?
This program calculates the low field electron mobility in a III-V semiconductor using Rode's method [1,2]. Rode's method for calculating low Field electron mobility is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors.
 D. L. Rode, Low-field electron transport, (R. K. Willardson, A. C. Beer), Semiconductors and Semimetals, Academic Press, New York – London, 10, 1–90 (1975).  D. L. Rode, Physical Review B, “Electron mobility in direct-gap polar semiconductors”, 2, 1012 (1970).
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