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Low Field Mobility: Calculates low field mobility in III-V semiconductors

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What is Low Field Mobility?

Rode's method for calculating low Field electron mobility [1,2] is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors. The III-V crystals are, for the most part, covalently bonded and possess the zinc-blende structure. Most of the III-V semiconductors are direct and are therefore well suited to the model assumed by Rode's technique.

The “Rode” program has several input parameters such as temperature, number of iterations to be used by the program. Wth this rappturized GUI interface users can choose to do multiple simulation runs without worrying about overwriting the results of the previous runs. S/he can compare the results of various runs to gain better understanding of which inputs affect low-field electron mobility the most.

[1] D. L. Rode, Low-field electron transport, (R. K. Willardson, A. C. Beer), Semiconductors and Semimetals, Academic Press, New York – London, 10, 1–90 (1975).

[2] D. L. Rode, Physical Review B, “Electron mobility in direct-gap polar semiconductors”, 2, 1012 (1970).