|Version 6 (modified by mcshin, 7 years ago) (diff)|
Multi-gate Nanowire FET: Tool Information Page
Each tool on nanoHUB has an information page that provides a description of the tool, related resources, and credits. For example, this page describes the Quantum Dot Lab: http://www.nanohub.org/simulation_tools/qdot_tool_information
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Who should be credited with contributing this tool? Who worked on it? Please list all of the authors for this work, in order of importance from top to bottom:
|Contributor Name||nanoHUB login or other contact information|
|Mincheol Shin||Information and Communications University, Rep. of Korea|
NOTE: You can supply more details about the contributions these people made and other acknowledgements in the Credits section below.
At a Glance
This is a one-line description of your tool:
3D Simulator for Silicon Nanowire Field Effect Transistors with Multiple Gates
Fill in a longer description (few paragraphs) about your tool here:
The silicon nanowire field effect transistors with multiple gates around the silicon channel that can significantly improve the gate control are considered to be promising candidates for the next generation transistors. In addition to effective suppression of short channel effects, the transistors show excellent current drive and they are also compatible with conventional CMOS processes.
This tool simulates the silicon nanowire field effect transistors (FETs) with multiple gates, such as Gate-all-around, double, tri, pi, and omega gates. The simulator features include 1) effective-mass theory, 2) uncoupled mode-space non-equilibrium Green's function (NEGF), 3) Poisson-transport self-consistent calculation, and 4) quantum ballistic transport. Only NMOS type can be simulated as of now. For the uncoupled mode-space NEGF applied to the nanowire FETs, please refer to the paper by J. Wang et. al. (J. Appl. Phys. 96, 2192, 2004). Users can also refer to the "NanoWireFet?" tool on nanoHUB.
Detailed numerical schemes employed in this tool can be found in "Efficient Simulation of Silicon Nanowire Field Effect Transistors and their Scaling Behavior", Mincheol Shin, to be published in J. Appl. Phys. (2006) and "Three Dimensional Quantum Simulation of Multigate Nanowire Field Effect Transistors", Mincheol Shin, which has been submitted to Mathematics and Computers in Simulation (2006), both of which can be downloaded from http://vega.icu.ac.kr/~nanolab/publication.htm.
Are there any related seminars, tutorials, homework assignments, or other items on nanoHUB? Any other books or references that help explain the theory? If so, list them here:
Is your tool built on top of some other well-known simulator or engine? If so, then credit that simulator here:
Powered by the Rappture tool by Michael McLennan? of Purdue Univ.
Was your tool built by a large team of people? Then describe their roles here:
Was this work funded by a grant? Give thanks here:
How would you like people to cite this work? Here's a suggestion:
If you are using the tool for any publication, we request that you cite:
- "Efficient Simulation of Silicon Nanowire Field Effect Transistors and their Scaling Behavior", Mincheol Shin, to be published in J. Appl. Phys. (2006)
- Simulations were performed by Multi-gate Nanowire FET on http://nanohub.org