|Version 6 (modified by ninad, 7 years ago) (diff)|
NanoNet: A simulation tool for Thin films transistors based on network of nanotubes or nanowires
Welcome to the NanoNet development area. This project is for people actively developing source code and documentation for this tool.
- GettingStarted - learn how to download the current code and make changes
- ToolInformation - describe your tool, its authors, and related materials
- TicketSystem - use trouble tickets to report problems and document ideas for future development
What is NanoNet?
First lets take a look at what this tool is all about !!
NanoNET is a tool to simulate the Nanobundle Network Thin Film Transistors (NB-TFTs). Random networks of carbon nanotubes with thousands of tubes and random orientation can be simulated using this tool. The final answer can be compactly formulated in the formula shown in the picture. Here ID is current and LC and LS is channel length and tube length of the transistor and m is the current exponent.
For a normal Si MOSFET, m = 1 and the current is simply inversely proportional to channel length. But for these nanotube networks, m > 1 is also possible. Indeed, m = 1 for very high density networks but the value of m increases with decreasing tube density of the network
This abnormal behavior can be simply understood as follows:
When the density of tubes is very high, most of the tubes take part in conduction and the current simply doubles on halving the channel length. But for a lower density network, there are some islands of pools of nanotubes that are not taking part in the conduction which start to connect as channel length is reduced. So not only the average path length reduces, but the number of paths also goes up with decreasing channel length which causes this super-linear increase in the current with channel length or m>1.
The smaller the density, the more pronounced is this effect and higher is the m.
How do I use this site?
You can edit any of the pages in this site and add information. For more instructions, see: