wiki:Experiment-PADRE-PROPHET-12X10
Last modified 6 years ago Last modified on 04/24/08 10:31:42
  • n-FinFET 12nm(width)X10nm(Lg) Id-Vg curve is plotted in the attached file. Gate workfunction is set to 4.6688eV and the doping densities: ns=7e+18, nch=1e+15, nd=7e+18, oxide thickness : 1.75nm

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