|Version 1 (modified by bhaley, 6 years ago) (diff)|
We have established that the simulation results (I-V) for Si using nanowireclassic
match experimental results very well, but the results for InAs differ by an order of magnitude.
To rectify this problem, we are doing the following:
- Sriram is working with the material database in PROPHET. Si has a large number of parameters, while InAs has only a few. By adding some of the missing parameters to the dbase entry for InAs, using published InAs values, we hope to close the gap between experimental and theoretical results.
- Kim is working with the equations in PROPHET, to see if any assumptions of Si or hardwired Si values exist. The Dessis manual provided by Abhijeet is very useful for the theoretical background.