- Problem to solve
The overall drain current of the results of InAs simulation on Prophet is one order lower than the experimental results of Thai for InAs nanowires.
- MaterialConstants for InAs Prophet simulation
- Mobility Modeling I've searched papers on google and found a paper(attached below) in which the electron mobility modeling for III-V material is presented. According to Dessis manual, I guess the Arora model and Lombardi's modeling for mobility is typically Si-based modeling. If so, could we implement new modeling in the existing Prophet code?
- Database Problem By judging from the material database for InAs, "SeeAlso" in the database means the InAs database includes the part of the silicon database as well. Then, we have a lot of problem because it means it just adopt silicon-based physical modeling(for example, mobility modeling) for InAs and use same constants(even for GaAs, they might use same model. we should dig in this more.) That might be the fundamental reason that we don't get the right answer for InAs.
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