Last modified 6 years ago Last modified on 01/26/08 16:25:55
  • The structure is modified to double-gate FINFET that the oxide over the channel is so thick that the gate voltage can only apply to the side walls. You can look into the attached file(FINFET_cross_section-doublegate.jpg). Inputdeck is also attached.
  • The thickness of FIN is adjusted to 30 nm.
  • The doping profile is set to 1019 /cm3 (p-type) in the source/drain region and 1016 /cm3 (n-type) in the channel region
  • The Id vs Vg characteristics(for PROPHET, PADRE and experimental results) is plotted in the attached excel file(FINFET-pchannel-p+sd-pcontact-at-VD005-doublegate.xlsx) and in the bmp file(FINFET-pchannel-p+sd-pcontact-at-VD005-doublegate.bmp)
    • PROPHET predict quite well in the inversion region(minus voltage) but PADRE's is a little bit larger.
    • The threshold voltage is quite large in both simulation.
    • At high plus voltage current goes below the experimental values.
  • The cross section in the X,Y,Z direction of the middle of channel(the coordinate setting is included in cross section sketch) is attached for VD=0.6(off) and VD=-0.5(on). The blue line is for potential, the green line for the electron density, and the red line for the hole density.
    • It seems that inversion layer is formed at the oxide/silicon interface at VD=-0.5.