Changes between Version 2 and Version 3 of ToolInformation


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Timestamp:
10/06/06 18:22:05 (8 years ago)
Author:
sqcao
Comment:

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  • ToolInformation

    v2 v3  
    1 = Process Lab - Oxidation: Tool Information Page = 
     1= Process Lab - Concentration Dependent Diffusion: Tool Information Page = 
    22 
    33== Date posted == 
     
    1919== At a Glance == 
    2020 
    21 This tool simulates the oxidation process in integrated circuit fabrication. 
     21This tool simulates the dopant diffusion process in integrated circuit fabrication. 
    2222 
    2323 
     
    2525== Description == 
    2626 
    27     The oxidation process is one of the most important processes in VLSI fabrication. It is implemented in processes such as the gate dielectric growth, the quality of which is extremely important for the scaling and performance of today's integrated circuit technology. This simulation tool integrates both the classic Deal-Grove's model and Massoud's model, which both describe the oxidation growth process. The tool gives users the freedom to adjust critical parameters and conditions in the process, such as oxidant condition, time, initial oxide thickness, temperature, pressure, crystal orientation, as well as an opportunity to choose between the Deal-Grove's or Massoud's model, or a combination of both.  
     27    The diffusion process is one of the most important processes in VLSI fabrication. It is implemented in processes such as the drain and source doping, the quality of which is extremely important for the electrical properties and performance of today's integrated circuit technology. This simulation tool simulates the dopant diffusion process by solving the partial differential equations. The tool gives users the freedom to adjust critical parameters and conditions in the process, such as the initial doping profile, time, temperature, length, and so on. It also gives users opportunities to choose between the delta or box-shaped dopant source, concentration dependency, as well as the type of dopants among 6 commonly used dopant species.  
    2828 
    29     An oxidation concentration versus oxidation layer thickness figure is plotted almost instantaneously after the users specify the necessary parameters and conditions. The oxidation process is simulated after one click on the web interface, while all the complicated details and equation-solving procedures are hidden behind the scene. The interactive interface of the module and its simplicity of usage demonstrates the module's educational value in that it helps students and engineers build intuition into the oxidation process with minimum learning curve. Insightful comparison, such as one between thin and thick oxide growth, can be done easily. Moreover, the module can be used as a handy and efficient "oxidation calculator".  
     29    A dopant concentration versus diffusion depth figure is plotted almost instantaneously after the users specify the necessary parameters and conditions. The entire diffusion process is simulated after one click on the web interface, while all the complicated details and PDE-solving procedures are hidden behind the scene. The interactive interface of the module and its simplicity of usage demonstrates the module's educational value in that it helps students and engineers build intuition into the diffusion process with minimum learning curve. Insightful comparison, such as one between concentration dependent and independent diffusion, can be done easily. Moreover, the module can be used as a handy and efficient "diffusion calculator".  
    3030 
    3131== Related Resources ==