Process Lab - Oxidation: Tool Information Page
October 10, 2006
|Contributor Name||nanoHUB login or other contact information||University|
|Shuqing Cao||sqcao, (shuqing.cao at stanford dot edu)||Stanford University|
|Yang Liu||yangliu1, (yangliu1 at stanford dot edu)||Stanford University|
|Peter Griffin||griffin, (griffin at stanford dot edu)||Stanford University|
devices, circuits, fabrication, process, VLSI
At a Glance
This tool simulates 1-D oxidation of silicon using Deal-Grove and Massoud models.
The oxidation process is one of the most important processes in VLSI fabrication. It is implemented in processes such as the gate dielectric growth, the quality of which is extremely important for the scaling and performance of today's integrated circuit technology. This simulation tool integrates both the classic Deal-Grove's model and Massoud's model, which both describe the oxidation growth process. The tool gives users the freedom to adjust critical parameters and conditions in the process, such as oxidant condition, time, initial oxide thickness, temperature, pressure, crystal orientation, as well as an opportunity to choose between the Deal-Grove's or Massoud's model, or a combination of both.
An oxide thickness versus time figure is plotted almost instantaneously after the users specify the necessary parameters and conditions. The oxidation process is simulated after one click on the web interface, while all the complicated details and equation-solving procedures are hidden behind the scene. The interactive interface of the module and its simplicity of usage demonstrates the module's educational value in that it helps students and engineers build intuition into the oxidation process with minimum learning curve. Insightful comparison, such as one between thin and thick oxide growth, can be done easily. Moreover, the module can be used as a handy and efficient "oxidation calculator".
Tutorial used in EE212 course taught by Dr. James Plummer at Stanford University:
- D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology, Fundamentals, Practice and Modeling, Prentice Hall, 2000
The numerical kernel, PROPHET, is developed by C. Rafferty and R.K. Smith at Bell Labs. GUI Interface powered by Rappture, developed by Michael J. McLennan?, Purdue University (2005)
Developed by Shuqing Cao, Yang Liu and Peter Griffin, Stanford University, 2006
Silicon VLSI Technology advisors: James Plummer, Michael Deal, and Peter Griffin, Stanford University
Technology CAD advisor: Robert Dutton, Stanford University