Last modified 8 years ago Last modified on 10/18/06 14:21:29

Process Lab - Oxidation Flux: Tool Information Page

Date posted

October 10, 2006


Contributor NamenanoHUB login or other contact informationUniversity
Shuqing Caosqcao, (shuqing.cao at stanford dot edu)Stanford University
Yang Liuyangliu1, (yangliu1 at stanford dot edu)Stanford University
Peter Griffingriffin, (griffin at stanford dot edu)Stanford University




devices, circuits, fabrication, process, VLSI

At a Glance

This tool simulates the oxidation concentration in oxidation growth process.


The oxidation process is one of the most important processes in VLSI fabrication. It is implemented in processes such as the gate dielectric growth, the quality of which is extremely important for the scaling and performance of today's integrated circuit technology. This simulation tool integrates both the classic Deal-Grove's model and Massoud's model, which both describe the oxidation growth process. Specifically, this tool investigates the effect of different parameters and conditions on oxidation process by looking into the oxidation flux. It gives users the freedom to adjust critical parameters and conditions in the process, such as oxidant condition, time, initial oxide thickness, temperature, pressure, crystal orientation, as well as an opportunity to choose between the Deal-Grove's or Massoud's model, or a combination of both.

An oxidation concentration versus oxidation layer thickness figure is plotted almost instantaneously after the users specify the necessary parameters and conditions. The slope of the curve depicts the oxidation flux. The oxidation process is simulated after one click on the web interface, while all the complicated details and equation-solving procedures are hidden behind the scene. The interactive interface of the module and its simplicity of usage demonstrates the module's educational value in that it helps students and engineers build intuition into the oxidation process with minimum learning curve. Insightful comparison, such as one between thin and thick oxide growth, can be done easily. Moreover, the module can be used as a handy and efficient "oxidation flux calculator".


Tutorial used in EE212 course taught by Dr. James Plummer at Stanford University:

Related Resources

  1. D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology, Fundamentals, Practice and Modeling, Prentice Hall, 2000

Powered By

The numerical kernel, PROPHET, is developed by C. Rafferty and R.K. Smith at Bell Labs. GUI Interface powered by Rappture, developed by Michael J. McLennan?, Purdue University (2005)


Developed by Shuqing Cao, Yang Liu and Peter Griffin, Stanford University, 2006

Silicon VLSI Technology advisors: James Plummer, Michael Deal, and Peter Griffin, Stanford University

Technology CAD advisor: Robert Dutton, Stanford University