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ABACUS—Introduction to Semiconductor Devices

by Gerhard Klimeck, Dragica Vasileska

Version 12
by Gerhard Klimeck
Version 61
by Shawn Rice

Deletions or items before changed

Additions or items after changed

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== Introduction to Semiconductor Devices with ABACUS==
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[[Image(abacus_ps_comp_2.gif, 600)]]
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[[Image(abacus_full.gif)]]
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When we hear the term ''semiconductor device'', we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from such components as transistors, capacitors, wires, light-emitting diodes and semiconductor lasers. These components are typically integrated into a single chip made of a semiconductor material.
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When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, wires and other electronic devices such as light emitting diodes and semiconductor lasers. These components are typically integrated into a single chip made of a semiconductor material.
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Almost every college or university department of Electrical Engineering offers instruction in the fundamental concepts of semiconductor devices. These concepts typically include lattices, crystal structure, bandstructure, band models, carrier distributions, drift, diffusion, pn junctions, solar cells, light-emitting diodes, bipolar junction transistors (BJT), metal-oxide semiconductor capacitors (MOS-caps), and multi-acronym-device field-effect transistors (mad-FETs).
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Almost every Electrical Engineering department teaches the fundamental concepts of semiconductor devices. These concepts typically include lattices, crystal structure, bandstructure, band models, carrier distributions, drift, diffusion, pn junctions, solar cells,light-emitting diodes, bipolar junction transistors (BJT), metal-oxide semiconductor capacitors (MOS-cap), and multi-acronym-device field effect transistors (mad-FETs).
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Advanced courses go more deeply into semiconductor theory, device physics, fabrication processes, as well as advanced and special purpose devices, such as heterostructure devices, power devices, and optoelectronic devices.
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Advanced courses go more deeply into semiconductor theory, device physics, fabrication processes, and advanced and special purpose devices, such as heterostructure devices, power devices, and optoelectronic devices.
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This nanoHUB "topic page" provides an easy access to selected nanoHUB educational material on semiconductor devices that is openly accessible.
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This nanoHUB "topic page" provides an easy access to selected nanoHUB Semiconductor Device Education Material that is openly accessible and usable by everyone around the world.
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We invite users to participate in this open source, interactive educational initiative:
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We invite you to participate in this open source, interactive educational initiative:
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*[/contribute/ Contribute content] by uploading it to the nanoHUB. (See "Upload your own content") on the nanoHUB mainpage.
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* [http://www.nanohub.org/contribute/ Contribute your content] by uploading it to the nanoHUB. (See "Contribute Content") on the nanoHUB mainpage.
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16 * Provide feedback for the items you use on the nanoHUB through the review system. (Please be explicit and provide constructive feedback.)
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* Let us know when things do not work for you - file a ticket through the nanoHUB "Help" feature on every page
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* Let us know when things do not work by filing a ticket through the nanoHUB "Help" feature on every page.
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* Finally, let us know what you are doing and [http://www.nanohub.org/feedback/suggestions/ your suggestions] improving the nanoHUB by using the "Feedback" section, which you can find under "[http://www.nanohub.org/support/ Support]"
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* If you have suggestions for improvements, [/wishlist/ submit a wish].
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Thank you for using the nanoHUB, and be sure to [http://www.nanohub.org/feedback/success_story/ share your nanoHUB success stories] with us. We like to hear from you, and our sponsors need to know that the nanoHUB is having impact.
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Thank you for using the nanoHUB, and be sure to [/feedback/success_story/ share your nanoHUB success stories] with us. We like to hear from you, and our sponsors need to know that the nanoHUB is having impact.
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=== Crystal Structures, Lattices ===
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== Crystal Structures, Lattices ==
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====[[Resource(3741, nolink)]]====
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=== [/tools/abacus Crystal Viewer] ===
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[[Image(/site/resources/tools/crystal_viewer/buckyball.jpg, 120, right)]] [[Image(/site/resources/tools/crystal_viewer/si.jpg, 120, right)]] [[Image(/site/resources/tools/crystal_viewer/fcc.jpg, 120, right)]] [[Image(/site/resources/tools/crystal_viewer/bcc.jpg, 120, right)]]
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[[Image(/site/resources/tools/crystal_viewer/si.jpg, 120 class=align-left)]] The [[Resource(3741)]] tool enables the interactive visualization different Bravais lattices, and crystal planes, and materials (diamond, Si, InAs, GaAs, graphene, buckyball). It is supported by a homework assignment available in [/site/resources/2008/01/03815/crystal_hw1.doc MS Word] and [/site/resources/2008/01/03816/crystal_hw1.pdf Adobe PDF] format.
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The [/resources/5065 Crystal Viewer in ABACUS] enables the interactive visualization different Bravais lattices, crystal planes, and materials (diamond, silicon, indium arsenide, gallium arsenide, graphene, and buckyball).
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=== Band Models / Band Structure ===
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First time use of the tool is supported by:
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[[Resource(6788)]]
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==== [[Resource(kronig_penney, nolink)]] ====
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It is supported by a homework assignment in
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[/site/resources/2008/01/03815/crystal_hw1.doc MS Word] and [/site/resources/2008/01/03816/crystal_hw1.pdf Adobe PDF] format.
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[[Image(/site/resources/tools/kronig_penney/allowed_bands_step_well.png, 120 class=align-left)]] The [[Resource(kronig_penney)]] solves the time independent Schroedinger Equation in a 1-D spatial potential variation. Rectangular, triangular, parabolic (harmonic), and Coulomb potential confinements can be considered. The user can determine energetic and spatial details of the potential profiles, compute the allowed and forbidden bands, plot the bands in a compact and an expanded zone, and compare the results against a simple effective mass parabolic band. Transmission is also calculated through the well for the given energy range.
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[[Resource(5144)]]
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==== [[Resource(1308, nolink)]] ====
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[/topics/CrystalViewerPage Crystal Viewer Tool Learning Materials] - Comprehensive set of learning materials for the Crystal Viewer Tool.
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[[Image(/site/resources/tools/bandstrlab/bandstrlab.gif, 120 class=align-right)]] The [[Resource(1308)]] tool enables the study of bulk dispersion relationships of Si, GaAs, InAs. The users can apply tensile and compressive strain and observe the variation in the bandstructure, bandgaps, and effective masses. Advanced users can study bandstructure effects in ultra-scaled (thin body) quantum wells, and nanowires of different cross sections. Bandstructure Lab uses the ''sp3s*d5'' tight binding method to compute E(k) for bulk, planar, and nanowire semiconductors.
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==== [[Resource(2815, nolink)]] ====
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[[Image(/site/resources/tools/strainbands/strainbands2.png, 120 class=align-left)]] [[Resource(2815)]] uses first-principles density functional theory within the local density approximation and ultrasoft pseudopotentals to compute and visualize density of states, E(k), charge densities, and Wannier functions for bulk semiconductors. Using this tool, you can study and learn about the bandstructures of bulk semiconductors for various materials under hydrostatic pressure and under strain conditions. Physical parameters such as the bandgap and effective mass can also be obtained from the computed E(k). We note here that the bandgaps obtained with DFT-LDA are underestimated, by about a factor of two for some semiconductors (including Si and GaAs), as is well known.
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== Band Models / Band Structure ==
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=== Carrier Distributions ===
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=== [/tools/abacus Piecewise Constant Potential Barriers Lab] ===
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[[Image(/site/resources/2008/01/03885/cd_pg1.jpg, 120 class=align-right)]] The [[Resource(fermi)]] demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, density of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature. It is supported by a [/resources/3878/ homework assignment] in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.
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[[Image(/site/resources/2008/06/04826/801/B_T_O_04eV_2_6nm_931pix.gif, 120, right)]] [[Image(/site/resources/2008/06/04826/801/B_T_O_04eV_2_10nm_931pix.gif, 120, right)]] [[Image(/site/resources/2008/06/04826/801/B_T_O_011eV_2_6nm_933pix.gif, 120, right)]]
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=== Bulk Semiconductors - Drift Diffusion ===
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This tool computes the transmission and the reflection coefficient of a five, seven, nine, eleven and 2n-segment piecewise constant potential energy profile. It enables the rapid visualization of the formation of band structures in a finite superlattice.
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[[Image(/site/resources/tools/semi/excess_carrier_profile_light_top.png, 120 class=align-right)]] The [[Resource(semi)]] enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials. It is supported by two related homework assignements [/resources/4191/ #1] and [/resources/4188/ #2] in which Students are asked to explore the concepts of drift, diffusion, quasi Fermilevels, and the response to light.
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First time use of the tool is supported by:
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[[Resource(6794)]]
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=== Semiconductor Process Modeling ===
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The materials below provide a detailed description of the physics required both to use this tool correctly and to interpret the results obtained:
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Semiconductor process modeling is a vast field in which several commercial products are available and in use for production in industry and to some extent in education. nanoHUB is serving a few applications that are primarily geared towards education. The four tools entitled 'Process Lab ...'[/tools/prolabox/ Oxidation], [/tools/prolaboxflux/ Oxidation Flux], [/tools/prolabcdd/ Concentration Dependent Diffusion], and [/tools/prolabdcd/ Point Defect Coupled Diffusion] are all educational front-ends to the general [[Resource(prophet)]] tool.
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* [/resources/4827 Open Systems]
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* [/resources/4829 Double-Barrier Case Explained]
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==== [[Resource(prolabox, nolink)]] ====
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Exercises that illustrate the importance of quantum-mechanical reflections in state-of-the-art devices and the resonance width dependence upon the geometry in the double-barrier structure that is integral part of resonant tunneling diodes are given below:
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[[Image(/site/resources/tools/prolabox/prolabox.gif, 120 class=align-right)]] The [[Resource(prolabox)]] simulates the oxidation process in integrated circuit fabrication. It is supported by a [/site/resources/2006/10/01904/oxidation.pdf supplemental document] that describes the theory and potential experiments that can be conducted.
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* [/resources/4831 Quantum-Mechanical Reflections]
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* [/resources/4849 Quantum-Mechanical Reflections in Nanodevices]
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* [/resources/4833 Double-Barrier Structure]
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==== [[Resource(prolaboxflux, nolink)]] ====
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The following assignments help to illustrate the formation of bands in periodic potentials and how the width and number of the energy bands changes by varying the geometry of the n-well potential:
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[[Image(/site/resources/tools/prolaboxflux/prolaboxflux.gif, 120 class=align-right)]] The [[Resource(prolaboxflux, nolink)]] simulates the oxidation flux in the oxide growth process in integrated circuit fabrication. It is supported by a [/site/resources/2006/10/01905/oxidationflux.pdf supplemental document] that describes the theory and potential experiments that can be conducted.
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* [/resources/4853 From one well, to two wells, to five wells, to periodic potentials]
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* [/resources/4873 Bands as a function of the geometry of the n-well potential]
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==== [[Resource(prolabcdd, nolink)]] ====
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One can also use this tool to calculate the transmission coefficient through barriers that are approximated with Piece-Wise constant segments.
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[[Image(/site/resources/tools/prolabcdd/prolabcdd.gif, 120 class=align-right)]] The [[Resource(prolabcdd, nolink)]] simulates the oxidation flux in the oxide growth process in integrated circuit fabrication.
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[/topics/PCPBTPage Piece-Wise Constant Potential Barriers Tool Learning Materials] - Comprehensive set of learning materials for the Piece-Wise Constant Potential Barriers Tool.
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==== [[Resource(prolabdcd, nolink)]] ====
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[[Image(/site/resources/tools/prolabdcd/prolabdcd.gif, 120 class=align-right)]] The [[Resource(prolabdcd)]] the point-defect-coupled diffusion process in integrated circuit fabrication.
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==== [[Resource(prophet, nolink)]] ====
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=== [/tools/abacus Periodic Potential Lab] ===
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[[Image(/site/resources/tools/kronig_penney/stepwell_ek_with_effmass_ek.png, 120, right)]] [[Image(/site/resources/tools/kronig_penney/expanded_ek_free_electron_ek_stepwell.png, 120, right)]] [[Image(/site/resources/tools/kronig_penney/stepwell_functional_with_energy.png, 120, right)]] [[Image(/site/resources/tools/kronig_penney/allowed_bands_step_well.png, 120, right)]]
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[[Image(/site/resources/tools/prophet/prophet.jpg, 120 class=align-left)]] [[Resource(prophet)]] was originally developed for semiconductor process simulation. Device simulation capabilities are currently under development. PROPHET solves sets of partial differential equations in one, two, or three spatial dimensions. All model coefficients and material parameters are contained in a database library which can be modified or added to by the user. Even the equations to be solved can be specified by the end user. It is supported by an extensive set of [/site/resources/tools/prophet/doc/guide.html User Guide] pages and a seminar on [/resources/973/ Nano-Scale Device Simulations Using PROPHET].
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The [/resources/5065 Periodic Potential Lab in ABACUS] solves the time independent Schrödinger Equation in a one-dimentional spatial potential variation. Rectangular, triangular, parabolic (harmonic), and Coulomb potential confinements can be considered. The user can determine energetic and spatial details of the potential profiles, compute the allowed and forbidden bands, plot the bands in a compact and an expanded zone, and compare the results against a simple effective-mass parabolic band. Transmission is also calculated through the well for the given energy range.
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==== [[Resource(tsuprem4, nolink)]] ====
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Exercises:
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[[Image(/site/resources/tools/tsuprem4/tsuprem2.png, 120 class=align-right)]] [[Resource(tsuprem4)]] simulates the processing steps used in the manufacture of silicon integrated circuits and discrete devices. The types of processing steps modeled by the current version of the program include ion implantation, inert ambient drive-in, silicon and polysilicon oxidation and silicidation, epitaxial growth, and low temperature deposition and etching of various materials.
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* [[Resource(4851)]]
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{{{
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#!html
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Because of the way TSUPREM-4 is licensed, it is available only to users on the West Lafayette campus of Purdue University. Note that you must use a network connection on campus, or else you will get an 'access denied' message.
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}}}
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=== PN Junctions ===
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[/topics/PPLPage Periodic Potential Lab Learning Materials] - Comprehensive set of learning materials for the Periodic Potential Lab.
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[[Image(/site/resources/tools/pntoy/pnjunction.gif, 120 class=align-left)]] [[Resource(229)]]: Everything you need to explore and teach the basic concepts of P-N junction devices. Edit the doping concentrations, change the materials, tweak minority carrier lifetimes, and modify the ambient temperature. Then, see the effects in the energy band diagram, carrier densities, net charge distribution, I/V characteristic, etc.
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[[Div(start, class=clear)]][[Div(end)]]
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=== [/tools/abacus Band Structure Lab] ===
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[[Image(/site/resources/tools/bandstrlab/bandstrlab.gif, 120, right)]] [[Image(/site/resources/tools/bandstrlab/composite1.jpg, 120, right)]] [[Image(/site/resources/tools/bandstrlab/composite2.jpg, 120, right)]]
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The [/tools/abacus Band Structure Lab in ABACUS] enables the study of bulk dispersion relationships of silicon, gallium arsenide, and indium arsenide. The users can apply tensile and compressive strain and observe the variation in the band structure, bandgaps, and effective masses. Advanced users can study band structure effects in ultra-scaled (thin body) quantum wells, and nanowires of different cross sections. Band Structure Lab uses the ''sp3s*d5'' tight-binding method to compute E(k) for bulk, planar, and nanowire semiconductors.
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Exercises:
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* [[Resource(5201)]]
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* [[Resource(5031)]]
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* [[Resource(4890)]]
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* [[Resource(4880)]]
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[/topics/BSLPage Band Structure Lab Learning Materials] - Comprehensive set of learning materials for the Band Structure Lab.
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[[Div(start, class=clear)]][[Div(end)]]
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== Bulk Semiconductors ==
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=== [/tools/abacus Carrier Statistics Lab] ===
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[[Image(/site/resources/tools/fermi/cd_carrierdensity.jpg, 120, right)]]
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[[Image(/site/resources/tools/fermi/cd_fermi1.jpg, 120, right)]]
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The [/tools/abacus Carrier Statistics Lab in ABACUS] demonstrates electron and hole-density distributions based on the Fermi-Dirac and Maxwell-Boltzmann equations. This tool shows the dependence of carrier density, density of states and occupation factor on temperature and fermi level. The user can choose between doped and undoped semi-conductors. silicon, germanium, and gallium arsenide can be studied as a function of doping or Fermi level, and temperature. The Carrier Statistics Lab is supported by a [/resources/3878/ homework assignment] in which students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and the phenomenon of freeze-out.
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First time use of the tool is supported by:
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[[Resource(6443)]]
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Exercises:
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* [[Resource(5146)]]
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* [[Resource(4892)]]
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* [[Resource(5197)]]
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[/topics/CarrierStatisticsPage Carrier Statistics Lab Learning Materials] - Comprehensive set of learning materials for the Carrier Statistics Lab.
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=== [/tools/abacus Drift Diffusion Lab] ===
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[[Image(/site/resources/tools/semi/excess_carrier_intrinsic_slab_bias.png, 120, right)]] [[Image(/site/resources/tools/semi/excess_carrier_profile_light_left.png, 120, right)]] [[Image(/site/resources/tools/semi/excess_carrier_profile_light_top.png, 120, right)]]
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The [/resources/5065 Drift Diffusion Lab in ABACUS] enables users to understand the basic concepts of the drift and diffusion of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light onto the semiconductor, applying bias, as well as both processes simultaneously, can be performed. This tool provides important information about carrier densities, transient and steady state currents, Fermi-levels and electrostatic potentials. It is supported by two related homework assignments [/resources/4191/ #1] and [/resources/4188/ #2] in which students are asked to explore the concepts of drift, diffusion, quasi Fermi-levels, and the response to light.
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Exercises:
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* [[Resource(5181)]]
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[/topics/DriftDiffusionPage Drift-Diffusion Lab Learning Materials] - Comprehensive set of learning materials for the Drift-Diffusion Lab.
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== PN Junctions ==
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=== [/tools/abacus/ PN Junction Lab] ===
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[[Image(/site/resources/tools/pntoy/pntoy3.gif, 120, right)]] [[Image(/site/resources/tools/pntoy/pntoy2.gif, 120, right)]] [[Image(/site/resources/tools/pntoy/pntoy1.gif, 120, right)]] [[Image(/site/resources/tools/pntoy/pnjunction.gif, 120, right)]]
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[/tools/abacus/ PN-Junction Lab in ABACUS] is everything users need to explore and teach the basic concepts of P-N junction devices. Edit the doping concentrations, change the materials, tweak minority-carrier lifetimes, and modify the ambient temperature. Then, see the effects in the energy band diagram, carrier densities, net charge distribution, current-voltage (I/V) characteristic, and other phenomena.
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153 There is a significant set of associated resources available for this tool.
154 * a [/site/resources/tools/pntoy/pnjunction.swf demo of this tool]
155 * a [/resources/980/ Primer on Semiconductor Device Simulation].
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* a Learning Module entitled [/resources/68/ PN Junction Theory and Modeling] which walks students through the PN junction theory and let's them verify concepts through on-line simulation.
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* a Learning Module entitled [/resources/68/ PN Junction Theory and Modeling] that walks students through the PN-junction theory and let's them verify concepts through on-line simulation.
157 * Homework assignment on the [/resources/893/ depletion approximation (on the undergraduate level)]
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* Homework assignment on the [/resources/932/ depletion approximation (on the undergraduate level)]
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* Homework assignment on the [/resources/932/ depletion approximation (at the graduate level)]
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=== Solar Cells ===
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Exercises:
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* [[Resource(4894)]]
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* [[Resource(4896)]]
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* [[Resource(4898)]]
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* [[Resource(5177)]]
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* [[Resource(5179)]]
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* [[Resource(5183)]]
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[/topics/PNDiode PN Junction Lab Learning Materials] - Comprehensive set of learning materials for the PN Junction Lab.
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[[Image(/site/resources/tools/adept/adept2.png, 120 class=align-left)]] [[Resources(2658)]] is a research-oriented tool that enables the study of solar cells for various material systems. A [/site/resources/2007/05/02659/adoc.pdf Reference Manual] and a [/site/resources/2007/05/02660/adept_heterostruct_tutorial.pdf ADEPT Heterostructure Tutorial] are available. The interface is not a simple point-and-click interface as for example the PN junction lab, but simulation commands are entered in a command-like fashion.
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=== Bipolar Junction Transistors ===
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== Bipolar Junction Transistors (BJT) ==
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=== [/tools/abacus/ Bipolar Junction Lab] ===
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[[Image(/site/resources/tools/bjt/3npn_gummel.gif, 120, right)]] [[Image(/site/resources/tools/bjt/1npn_input.jpg, 120, right)]] [[Image(/site/resources/tools/bjt/2npn_output.gif, 120, right)]]
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[[Image(/site/resources/tools/bjt/5_BJTenergy_nonequil.gif, 120 class=align-left)]] The [[Resource(bjt)]] allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user. It is supported by a [/resources/4185/ homework assignment] in which Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.
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The [/tools/abacus/ Bipolar Junction Lab in ABACUS] allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows users to simulate either the npn- or pnp-type of device. Users can specify the emitter, base and collector region depths and doping densities. Also the material and minority-carrier lifetimes can be specified by the user. The tool is supported by a [/resources/4185/ homework assignment] in which students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also, students are requested to provide a qualitative discussion.
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=== MOS Capacitors ===
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Exercises:
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==== [[Resource(451, nolink)]] ====
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* [[Resource(5199)]]
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* [[Resource(5193)]]
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* [[Resource(5083)]]
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[[Image(/site/resources/tools/moscap/moscap.jpg, 120 class=align-left)]] The [[Resource(451)]] tool enables a semi-classical analysis of MOS Capacitors. Simulates the capacitance of bulk and dual gate capacitors for a variety of different device sizes, geometries, temperature and doping profiles.
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[/topics/BJTLabPage BJT Lab Learning Materials] - Comprehensive set of learning materials for the BJT Lab.
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[[Div(start, class=clear)]][[Div(end)]]
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==== [[Resource(221, nolink)]] ====
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== MOS Capacitors ==
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=== [/tools/abacus/ MOScap] ===
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[[Image(/site/resources/tools/moscap/moscap2.gif, 120, right)]] [[Image(/site/resources/tools/moscap/moscap3.gif, 120, right)]] [[Image(/site/resources/tools/moscap/moscap.jpg, 120, right)]]
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The [/tools/abacus/ MOScap Tool in ABACUS] enables a semi-classical analysis of metal-oxide-semionductor (MOS) capacitors. It simulates the capacitance of bulk- and dual-gate capacitors for a variety of different device sizes, geometries, temperature, and doping profiles.
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First time use of the tool is supported by:
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[[Resource(6546)]]
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Exercises:
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* [[Resource(4855)]]
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* [[Resource(5185)]]
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* [[Resource(5187)]]
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* [[Resource(5189)]]
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* [[Resource(5087)]]
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[/topics/MOSCAPPage MOSCap Learning Materials] - Comprehensive set of learning materials for the MOSCap Tool.
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[[Image(/images/tool/schred/schred.jpg, 120 class=align-right)]] [[Resource(221)]] calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrodinger equation.
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=== MOSFET / mad-FET ===
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== MOSFETs ==
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The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these concepts. The "Many-Acronym-Device-FET" or "madFET" was born.
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=== [/tools/abacus/ MOSfet Lab] ===
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==== [[Resource(452, nolink)]] ====
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[[Image(/site/resources/tools/mosfet/1mosfet.gif, 120, right)]] [[Image(/site/resources/tools/mosfet/mosfet.jpg, 120, right)]]
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[[Image(/site/resources/tools/mosfet/mosfet.jpg, 120 class=align-right)]] The [[Resource(452)]] tool enables a semi-classical analysis of current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.
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The [/tools/abacus/ MOSfet Lab in ABACUS] tool enables a semi-classical analysis of current-voltage (I/V) characteristics for bulk and SOI Field-Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature, and doping profiles.
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==== [[Resource(nanomos, nolink)]] ====
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Exercises:
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[[Image(/site/resources/tools/nanomos/nanomos.gif, 120 class=align-left)]] The [[Resource(nanomos)]] tool enables a 2D simulation for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive for a variety of different device sizes, geometries, temperature and doping profiles.
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* [[Resource(4906)]]
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* [[Resource(5104)]]
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* [[Resource(5191)]]
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* [[Resource(5085)]]
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==== [[Resource(1090, nolink)]] ====
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[/topics/MOSFETLabPage MOSFet Learning Materials] - Comprehensive set of learning materials for the MOSFet Tool.
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[[Image(/site/resources/tools/nanofet/nanofet.gif, 120 class=align-right)]] The [[Resource(1090)]] simulates quantum ballistic transport properties in two-dimensional MOSFET devices for a variety of different device sizes, geometries, temperature and doping profiles.
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==== [[Resource(fettoy, nolink)]] ====
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[[Image(/site/resources/tools/fettoy/1-fettoy.gif, 120 class=align-left)]] [[Resource(fettoy)]] is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands. Additional related documents are: [/tools/fettoy/detailed_description FETToy Detailed Description], [/resources/122/ Theory of Ballistic Nanotransistors], [/resources/2844/ Learning Module on FETToy], [/resources/622/ Homework Exercises for FETToy].
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== About ABACUS Constituent Tools ==
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=== TCAD Simulators ===
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The Assembly of Basic Applications for Coordinated Understanding of Semiconductors (ABACUS) has been put together from individual tools to provide educators and students with a one-stop-shop in semiconductor education. It therefore benefits tremendously from the hard work that the contributors of the individual tool builders have put into their tools.
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As a matter of credit, simulation runs that are performed in the ABACUS tool are also credited to the individual tools, which help the ranking of the individual tools. We do also count the number of usages of the individual tools in the ABACUS tool set, to measure the ABACUS impact and possibly also improve the tool.
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In the description above, we do not refer to the individual tools since we want to guide the users to the composite ABACUS tool. We cite the individual tools here explicitly so they are being given the appropriate credit and on their respective tool pages are being linked to this ABACUS topic page.
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[[Resource(crystal_viewer)]],
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[[Resource(pcpbt)]],
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[[Resource(kronig_penney)]],
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[[Resource(bandstrlab)]],
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[[Resource(fermi)]],
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[[Resource(semi)]],
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[[Resource(pntoy)]],
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[[Resource(bjt)]],
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[[Resource(moscap)]],
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and
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[[Resource(mosfet)]].
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== Additional Reading and Tools ==
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=== Solar Cells ===
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==== [/tools/adept/ ADEPT] ====
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[[Image(/site/resources/tools/adept/adept2.png, 120, right)]]
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[/tools/adept/ ADEPT] is not supported within ABACUS because it is a research-oriented tool that enables the study of solar cells for various material systems. A [/site/resources/2007/05/02659/adoc.pdf Reference Manual] and a [/site/resources/2007/05/02660/adept_heterostruct_tutorial.pdf ADEPT Heterostructure Tutorial] are available. The interface is not a simple point-and-click interface, as for example the PN junction lab, but simulation commands are entered via a command line.
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=== MOS Capacitors with Quantum Corrections===
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==== [/tools/schred/ Schred] ====
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[[Image(/images/tool/schred/schred.jpg, 120, right)]]
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[/tools/schred/ Schred] is not formally supported in ABACUS. It contains more advanced quantum mechanical concepts and is a nanoHUB contributed tool. It calculates the envelope wavefunctions and the corresponding bound-state energies in a typical metal-oxide semiconductor (MOS) or semiconductor-oxide-semiconductor (SOS) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrödinger equation.
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[[Div(start, class=clear)]][[Div(end)]]
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==== Padre ====
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Exercises:
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* [[Resource(4900)]]
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* [[Resource(4902)]]
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* [[Resource(4904)]]
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* [[Resource(4794)]]
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* [[Resource(4796)]]
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[[Image(/site/resources/tools/padre/padre.jpg, 120 class=align-left)]] [[Resource(941)]] is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as [[Tool(prophet)]]. A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:
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=== madFETs—more Field Effect Transistors ===
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[[Image(/site/resources/tools/nanomos/nanomos2.gif, 120, right)]] [[Image(/site/resources/tools/nanomos/nanomos3.gif, 120, right)]]
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[[Image(/site/resources/tools/nanofet/nanofet2.gif, 120, right)]]
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[[Image(/site/resources/tools/fettoy/1-fettoy.gif, 120, right)]]
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[[Image(/site/resources/tools/fettoy/fettoy1.gif, 120, right)]]
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* [/site/resources/tools/padre/doc/index.html User Guide (HTML)]
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The Field-Effect Transistor has been proposed and implemented in many physical systems, materials, and geometries. A multitude of acronyms have developed around these concepts. The "Many-Acronym-Device-FET" (madFET) was born. The author of this document was able to trace an attribute to the acronym madFET from [http://www.utdallas.edu/~frensley/ Bill Frensley] to [http://en.wikipedia.org/wiki/Herbert_Kroemer Herbert Kroemer].
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* [/site/resources/2006/06/01581/intro_dd_padre_word.pdf Abbreviated First Time User Guide]
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* [tools/padre/faq/ FAQ]
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* A set of course notes on [/resources/1500/ Computational Electronics] with detailed explanations on bandstructure, pseudopotentials, numerical issues, and drift diffusion.
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* [resources/1516/ Introduction to DD Modeling with PADRE]
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* [resources/1516/ MOS Capacitors: Description and Semiclassical Simulation With PADRE]
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* [/resources/980/ A Primer on Semiconductor Device Simulation] [[span((Seminar), class=caption)]]
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==== Prophet ====
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nanoHUB.org hosts a variety of tools that enable the simulation of field effect transisors for a variety of different geometries in a variety of different levels of approximations. There is a [/topics/madfets madFETs topics page] that provides an overview of many of the nanoHUB.org madFET tools.
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[[Image(/site/resources/tools/prophet/prophet.jpg, 120 class=align-left)]] [[Resource(prophet)]] was originally developed for semiconductor process simulation. Device simulation capabilities are currently under development. PROPHET solves sets of partial differential equations in one, two, or three spatial dimensions. All model coefficients and material parameters are contained in a database library which can be modified or added to by the user. Even the equations to be solved can be specified by the end user. It is supported by an extensive set of [/site/resources/tools/prophet/doc/guide.html User Guide] pages and a seminar on [/resources/973/ Nano-Scale Device Simulations Using PROPHET].
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=== Technology Computer Aided Design—TCAD ===
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[[Image(/site/resources/tools/padre/padre.jpg, 120, right)]]
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Once students have mastered the basics of semiconductors they may be quite interested in venturing into TCAD. There is a [/topics/atcadlab topics page for aTCADlab] and associated single [/tools/atcadlab aTCADlab] tool that assembles various TCAD tools available on the nanoHUB. Process, device, and circuit simulation is represented in [/tools/atcadlab aTCADlab].

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.