Introduction to Semiconductor Devices with ABACUS
When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, wires and other electronic devices such as light emitting diodes and semiconductor lasers. These components are typically integrated into a single chip made of a semiconductor material.
Almost every Electrical Engineering department teaches the fundamental concepts of semiconductor devices. These concepts typically include lattices, crystal structure, bandstructure, band models, carrier distributions, drift, diffusion, pn junctions, solar cells,light-emitting diodes, bipolar junction transistors (BJT), metal-oxide semiconductor capacitors (MOS-cap), and multi-acronym-device field effect transistors (mad-FETs).
Advanced courses go more deeply into semiconductor theory, device physics, fabrication processes, and advanced and special purpose devices, such as heterostructure devices, power devices, and optoelectronic devices.
This nanoHUB “topic page” provides an easy access to selected nanoHUB Semiconductor Device Education Material that is openly accessible and usable by everyone around the world.
We invite you to participate in this open source, interactive educational initiative:
- Contribute your content by uploading it to the nanoHUB. (See “Contribute Content”) on the nanoHUB mainpage.
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Crystal Structures, Lattices
The Crystal Viewer in ABACUS tool enables the interactive visualization different Bravais lattices, and crystal planes, and materials (diamond, Si, InAs, GaAs, graphene, buckyball). It is supported by homework assignment in MS Word and Adobe PDF format.
Band Models / Band Structure
The Periodic Potential Lab in ABACUS solves the time independent Schroedinger Equation in a 1-D spatial potential variation. Rectangular, triangular, parabolic (harmonic), and Coulomb potential confinements can be considered. The user can determine energetic and spatial details of the potential profiles, compute the allowed and forbidden bands, plot the bands in a compact and an expanded zone, and compare the results against a simple effective mass parabolic band. Transmission is also calculated through the well for the given energy range.
The Bandstructure Lab in ABACUS enables the study of bulk dispersion relationships of Si, GaAs, InAs. The users can apply tensile and compressive strain and observe the variation in the bandstructure, bandgaps, and effective masses. Advanced users can study bandstructure effects in ultra-scaled (thin body) quantum wells, and nanowires of different cross sections. Bandstructure Lab uses the sp3s*d5 tight binding method to compute E(k) for bulk, planar, and nanowire semiconductors.
StrainBands in ABACUS uses first-principles density functional theory within the local density approximation and ultrasoft pseudopotentals to compute and visualize density of states, E(k), charge densities, and Wannier functions for bulk semiconductors. Using this tool, you can study and learn about the bandstructures of bulk semiconductors for various materials under hydrostatic pressure and under strain conditions. Physical parameters such as the bandgap and effective mass can also be obtained from the computed E(k). We note here that the bandgaps obtained with DFT-LDA are underestimated, by about a factor of two for some semiconductors (including Si and GaAs), as is well known.
The Carrier Statistics Lab in ABACUS demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, density of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature. It is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.
- Exercise: MATLAB Tool Construction for Degenerate/Nondegenerate Semiconductors That Includes Partial Ionization of the Dopants
The Drift Diffusion Lab in ABACUS enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials. It is supported by two related homework assignments #1 and #2 in which Students are asked to explore the concepts of drift, diffusion, quasi Fermi levels, and the response to light.
PN-Junction Lab in ABACUS: Everything you need to explore and teach the basic concepts of P-N junction devices. Edit the doping concentrations, change the materials, tweak minority carrier lifetimes, and modify the ambient temperature. Then, see the effects in the energy band diagram, carrier densities, net charge distribution, I/V characteristic, etc.
There is a significant set of associated resources available for this tool.
- a demo of this tool
- a Primer on Semiconductor Device Simulation.
- a Learning Module entitled PN Junction Theory and Modeling which walks students through the PN junction theory and let’s them verify concepts through on-line simulation.
- Homework assignment on the depletion approximation
- Homework assignment on the depletion approximation
- PN Diode Exercise: Series Resistance
- Exercise: PIN Diode
- PN Diode Exercise: Graded Junction
- Basic operation of a PN diode - Theoretical exercise
- PN diode - Advanced theoretical exercises
- Schottky diode - Theoretical exercises
ADEPT is not supported within ABACUS, since it is a research-oriented tool that enables the study of solar cells for various material systems. A Reference Manual and a ADEPT Heterostructure Tutorial are available. The interface is not a simple point-and-click interface as for example the PN junction lab, but simulation commands are entered in a command-like fashion.
Bipolar Junction Transistors (BJT)
(Image(/site/resources/tools/bjt/5_BJTenergy_nonequil.gif, 120 class=align-right) failed - File not found) The Bipolar Junction Lab in ABACUS allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user. It is supported by a homework assignment in which Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.
The MOScap Tool in ABACUS tool enables a semi-classical analysis of MOS Capacitors. Simulates the capacitance of bulk and dual gate capacitors for a variety of different device sizes, geometries, temperature and doping profiles.
- Exercise: CV curves for MOS capacitors
- MOSCAP - Theoretical Exercises 1
- MOSCAP - Theoretical Exercises 2
- MOSCAP - Theoretical Exercises 3
- MOS Capacitors: Theory and Modeling
(Image(/images/tool/schred/schred.jpg, 120 class=align-right) failed - File not found) Schred is not formally supported in ABACUS. It contains more advanced quantum mechanical concepts and is a nanoHUB contributed tool. It calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide-Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrodinger equation.
- Schred: Exercise 1
- SCHRED: Exercise 2
- Schred: Exercise 3
- Quantum Size Effects and the Need for Schred
- Schred Tutorial Version 2.1
The MOSfet Lab in ABACUS tool enables a semi-classical analysis of current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.
- MOSFET Exercise
- Exercise: Basic Operation of n-Channel SOI Device
- MOSFET - Theoretical Exercises
- MOSFET Operation Description
About ABACUS Constituent Tools
The Assembly of Basic Applications for Coordinated Understanding of Semiconductors (ABACUS) has been put together from individual disjoint tools to enable educators and students to have a one-stop-shop in semiconductor education. It therefore benefits tremendously from the hard work that the contributors of the individual tool builders have put into their tools.
As a matter of credit, simulation runs that are performed in the ABACUS tool are also credited to the individual tools, which help the ranking of the individual tools. We do also count the number of usages of the individual tools in the ABACUS tool set, to measure the ABACUS impact and possibly also improve the tool.
In the description above we do not refer to the individual tools since we want to guide the users to the composite ABACUS tool. We cite the individual tools here explicitly so they are being given the appropriate credit and on their rspective tool pages are being linked to this ABACUS topic page.
Crystal Viewer Tool, Piece-Wise Constant Potential Barriers Tool, Periodic Potential Lab, Band Structure Lab, Carrier Statistics Lab, Drift-Diffusion Lab, PN Junction Lab, BJT Lab, MOSCap, and MOSFet.