What's New: Past Month

Publications feed

  1. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 06 Apr 2016 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.


  2. A Verilog-A Compact Model for Negative Capacitance FET 05 Apr 2016 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful...


  3. Stanford 2D Semiconductor (S2DS) Transistor Model 04 Apr 2016 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.