By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b) the limitations of the gradual channel approximation, and c) the limitations of the drift-diffusion model.
The specific objectives of the MOSFET Lab are:
Recommended Reading
Users who are new to the operation and modeling of MOSFET devices should consult the following resources:
1. Michael Shur. (1990). Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice Hall.
2. Simon M. Sze and Kwok K. Ng. (2007). Physics of Semiconductor Devices. 3rd ed. Hoboken, NJ: Wiley.
3. Dragica Vasileska, Stephen M. Goodnick and G. Klimeck. (2010). Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation. Boca Raton, LA: CRC Press.
Demo
MOSFet Demonstration: MOSFET Device Simulation and Analysis
Theoretical Descriptions
* Tutorial_PADRE_Simulation_Tools.pdf (tutorial)
* Lecture 3A: The Ballistic MOSFET
* Lecture 3B: The Ballistic MOSFET
* MOSFET Operation Description
* Physics of Nanoscale MOSFETs
Tool Verification
Verification of the Validity of the MOSFET Tool
Examples
Exercises and Homework Assignments
1. MOSFET - Theoretical Exercises
3. Exercise for MOSFET Lab: DIBL Effect
4. Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
5. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
6. Exercise for MOSFET Lab: Device Scaling
Solutions to Exercises
Work in progress!
Evaluation
This test will assess users’ conceptual understanding of the physical, mathematical and computational knowledge related to operation of MOSFET devices.
Challenge
In this final challenge users will integrate what they have learned about the operation of MOSFET devices.