intrinsic carrier concentration is neither tunable or given
For example, the value obtained with the “carrier concentration profile” for GaAs is around 1.7E6 cm-3 at 300 K instead of 2E6 cm-3 commonly used in literature.
Due to local system maintenance on Tuesday, September 27th, nanoHUB will be unable to launch simulation jobs on clusters conte, rice, carter, and hansen. We apologize for any inconvenience.
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