WHiTe Compact Models

2023-03-24 20:59:26 | Compact Models | Contributor(s): Neal Graham Wood | doi:10.21981/6XDQ-E773

This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET (junction field-effect transistor).

Compact Model Vortex-STNO

2022-11-17 15:52:11 | Compact Models | Contributor(s): Sonal Shreya, Farshad Moradi | doi:10.21981/EC5D-JZ92

we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linear and nonlinear dynamics of the magnetic vortex core.

THM-OTFT Compact Model

2022-06-10 20:23:08 | Compact Models | Contributor(s): Alexander Kloes, Jakob Simon Leise, Jakob Pruefer, Aristeidis Nikolaou, Ghader Darbandy | doi:10.21981/Y7S6-EZ63

Charge-based compact model for the DC and AC simulation of organic TFTs

THM-TFET Compact Model

2022-05-16 23:37:38 | Compact Models | Contributor(s): Alexander Kloes, Fabian Horst, Anita Farokhnejad, Michael Graef | doi:10.21981/NGS2-AE57

THM-TFET is a compact model for a double-gate Tunnel-FET, is provided in Verilog-A code and allows for DC, AC and transient circuit simulation.

CCAM Compact Carbon Nanotube Field-Effect Transistor Model

2022-05-16 23:39:34 | Compact Models | Contributor(s): Michael Schroter, Manojkumar Annamalai, Max Haferlach, Martin Claus | doi:10.21981/5E9F-2S90

CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

PSPHV LDMOS

2021-11-24 14:32:19 | Compact Models | Contributor(s): Colin McAndrew, kejun xia | doi:10.21981/93B1-9539

This is an update to version 1.0.6 of the PSPHV LDMOS model (an enhanced PSP103.6 model for the core MOS transistor, an updated JFETIDG model for the drift region, JUNCAP2 for the pn-junction diodes, PSP MOS for gate-drain overlap capacitance.

Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

2021-02-02 02:43:58 | Compact Models | Contributor(s): Lixia Han, Linlin Cai, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/MRFT-C373

The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be embedded in SPICE and Cadence for circuit simulations.

Florida Ferroelectric Tunnel Junction Device Model

2020-10-02 02:40:45 | Compact Models | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48

A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.

Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

2019-06-08 22:48:08 | Compact Models | Contributor(s): Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan | doi:10.21981/15GF-KX29

The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

Stanford 2D Semiconductor (S2DS) Transistor Model

2018-08-15 02:33:34 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

2018-07-18 16:10:04 | Compact Models | Contributor(s): Rongmei Chen, Jie LIANG, Jaehyun Lee, Vihar Georgiev, Aida Todri | doi:10.4231/D3183448N

In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT interconnect performances and power consumption. Variabilities

CNRS - Carbon Nanotube Interconnect RC Model

2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.

Notre Dame TFET Model

2017-09-01 17:35:14 | Compact Models | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3CF9J852

Notre Dame TFET compact model version 2.1.0.

Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

2018-04-16 17:56:34 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3862BC8C

Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.

Purdue Solar Cell Model (PSM) - HIT

2018-04-16 18:09:10 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3CV4BS80

Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.

Purdue Solar Cell Model (PSM) - Si

2018-04-16 18:09:34 | Compact Models | Contributor(s): Mark Lundstrom, Muhammad A. Alam, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Xingshu Sun | doi:10.4231/D3HM52M18

Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for c-Si solar cells.

Purdue Solar Cell Model (PSM) - CIGS/CdTe

2018-04-16 18:09:56 | Compact Models | Contributor(s): Xingshu Sun, Sourabh Dongaonkar, Raghu Vamsi Krishna Chavali, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3NC5SD6H

Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for CIGS/CdTe.

MIT TFET compact model including the impacts of non-idealities

2017-05-08 02:34:24 | Compact Models | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.

Optical Ring Modulator ModSpec Compact Model

2017-01-05 16:54:03 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated.

Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.