Tunnel FET Compact Model

By Hesameddin Ilatikhameneh1, Tarek Ahmed Ameen (editor)1, Fan Chen (editor)1, Ramon Salazar1, Gerhard Klimeck1, Joerg Appenzeller1, Rajib Rahman1

1. Purdue University

Model Tunnel FETs based on analytic modeling and WKB method

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Version 1.0 - published on 24 Aug 2016

doi:10.4231/D36D5PC3P cite this

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Abstract

The purpose of this tool is to provide fast and accurate IV data for conventional Tunnel FETs based on the device design.

Cite this work

Researchers should cite this work as follows:

    • Salazar, Ramon B., Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, and Joerg Appenzeller. "A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations." Journal of Applied Physics 118, no. 16 (2015): 164305.
    • Ilatikhameneh, Hesameddin, Ramon B. Salazar, Gerhard Klimeck, Rajib Rahman, and Joerg Appenzeller. "From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling." (2015).
    • Ilatikhameneh, Hesameddin, Gerhard Klimeck, Joerg Appenzeller, and Rajib Rahman. "Scaling theory of electrically doped 2D transistors." IEEE Electron Device Letters 36, no. 7 (2015): 726-728.
    • Ameen, Tarek A., Hesameddin Ilatikhameneh, Gerhard Klimeck, and Rajib Rahman. "Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors." Scientific reports (2016), doi:10.1038/srep28515
    • Ilatikhameneh, Hesameddin, Yaohua Tan, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman, and Joerg Appenzeller. "Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 (2015): 12-18.
  • Hesameddin Ilatikhameneh; Tarek Ahmed Ameen; Fan Chen; Ramon Salazar; Gerhard Klimeck; Joerg Appenzeller; Rajib Rahman (2016), "Tunnel FET Compact Model," http://nanohub.org/resources/tunnelfet. (DOI: 10.4231/D36D5PC3P).

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  1. nanoelectronics