Electrostatic Properties Simulation of Layered 2D Material Devices

Simulate charge carrier density, potential drop and energy band diagram across any vertical 1D cross-section in a layered heterostructure of 2D semiconductors, graphene and metals.

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Version 1.01 - published on 02 May 2018

doi:10.4231/D3C24QQ39 cite this

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Abstract

This tool calculates the carrier density at the layers, potential drop across the dielectrics and energy band diagram along any 1D vertical cross-section of a van der Waals heterostructure of 2D materials, graphene and metals under different applied voltages to different layers.

Please checkout the “Supporting Docs” section for detailed description of the tool.

Credits

Abhinandan Borah, Punnu Jose Sebastian and James T. Teherani, Columbia University

Sponsored by

This material is based upon work supported by the National Science Foundation under Grant No. 1752401.

Publications

A. Borah, P. J. Sebastian, A. Nipane, and J. T. Teherani, “An Intuitive Equivalent Circuit Model for Multilayer Van Der Waals Heterostructures,” IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4209–4215, Oct. 2018.

Cite this work

Researchers should cite this work as follows:

  • Abhinandan Borah, Jamie Teherani (2018), "Electrostatic Properties Simulation of Layered 2D Material Devices," http://nanohub.org/resources/2dmatstacks. (DOI: 10.21981/D3C24QQ39).

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