Tags: CNTFETs

Description

CNTFET

A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that uses a carbon nanotube based channel instead of silicon as found in a traditional MOSFET.

Online Presentations (1-5 of 5)

  1. High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling

    14 Jan 2015 | | Contributor(s):: Martin Claus

    The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...

  2. High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework

    07 Jan 2015 | | Contributor(s):: Martin Claus

    The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...

  3. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | | Contributor(s):: Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  4. What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?

    18 Feb 2008 | | Contributor(s):: Joerg Appenzeller

    Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....

  5. The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors

    03 Aug 2007 | | Contributor(s):: Dave Lyzenga

    In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...