Tags: device modelling and simulation

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  1. A Verilog-A Compact Model for Negative Capacitance FET

    28 Nov 2015 | Compact Models | Contributor(s):

    By Muhammad Abdul Wahab1, Muhammad A. Alam1

    Purdue University

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...

    https://nanohub.org/publications/95/?v=1

  2. Nour Boukortt, Ph.D.

    https://nanohub.org/members/133335

  3. Sunjeet Jena

    https://nanohub.org/members/130889

  4. vikas nehra

    https://nanohub.org/members/127271

  5. nithya kalyani

    https://nanohub.org/members/125393

  6. Fahad Al Mamun

    https://nanohub.org/members/125385

  7. Mani Kandan

    https://nanohub.org/members/119445

  8. Ritam Sarkar

    https://nanohub.org/members/118773

  9. Kalyan Chakravarthy

    COMPLETED B.TECH IN ECE FROM SRI VENKATESWARA UNIVERSITY.AND CURRENTLY PURSUING M.TECH IN NIT SILCHAR

    https://nanohub.org/members/116360

  10. Shubhajit Mukherjee

    https://nanohub.org/members/111436

  11. Praveen C S

    https://www.linkedin.com/profile/view?id=154256162&trk=nav_responsive_tab_profile

    https://nanohub.org/members/109012

  12. Dhruba Mandal

    https://nanohub.org/members/106332

  13. Theodore Chandra

    https://nanohub.org/members/105987

  14. Venu Madhava Rao S.P.

    https://nanohub.org/members/105582

  15. Shiv Gopal Yadav

    https://nanohub.org/members/104560

  16. Ozgur Polat

    https://nanohub.org/members/104542

  17. PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)

    29 May 2014 | | Contributor(s):: Bryan M. Wong

    PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.

  18. Tunnel FET Learning Tutorial

    05 Mar 2014 | | Contributor(s):: Mark Cheung

    This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results

  19. How to simulate the GaN Power Device model

    Q&A|Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    https://nanohub.org/answers/question/1317

  20. How to simulate the GaN Power Device model

    Q&A|Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    https://nanohub.org/answers/question/1316