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From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
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Gokula Kannan
Gokula Kannan received his B.E in Electronics and Communication (Anna University, India) in 2007 and the M.S degree in Electrical Engineering from Arizona State University in 2010. He is presently...
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GOVARTHANAN V
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Guidelines for Writing NEEDS-certified Verilog-A Compact Models
19 Jun 2013 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury
This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional guidelines for writing Verilog-A models, see the presentation by Drs. Geoffrey Coram and Colin McAndrew.
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Hasantha Malavipathirana
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HERACLIO HEREDIA URETA
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hitesh kumar sahoo
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III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | | Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
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Illinois ECE 440 Solid State Electronic Devices, Lecture 1 Introduction
26 Nov 2008 | | Contributor(s):: Eric Pop
Introduction to Solid State Electronic Devices
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Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias
30 Oct 2009 | | Contributor(s):: Eric Pop
Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.
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Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices
14 Aug 2008 | | Contributor(s):: Eric Pop
Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities
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Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift
19 Aug 2008 | | Contributor(s):: Eric Pop
Discussion of scaleReview of atomic structureIntroduction to energy band model
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Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan
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Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations
30 Dec 2008 | | Contributor(s):: Eric Pop
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Illinois ECE 440: Solid State Electronic Devices
18 Aug 2008 | | Contributor(s):: Eric Pop
The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic...
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Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...
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Introduction to Compact Models and Circuit Simulation
19 Jun 2013 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury
The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed to ease the process of developing simulation-ready compact models for novel nanodevices, is briefly...
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Introduction to DD Modeling with PADRE
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Silvaco/PADRE Description and Application to Device Simulation
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Kalyan Chakravarthy
COMPLETED B.TECH IN ECE FROM SRI VENKATESWARA UNIVERSITY.AND CURRENTLY PURSUING M.TECH IN NIT SILCHAR
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Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...