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Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
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14 Jan 2008 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin
Material layers with a thickness of a few nanometers are common-place in today’s semiconductordevices. Before long, device fabrication methods will reach a point at which the other two devicedimensions are scaled down to few tens of nanometers. The total atom count in such deca-nanodevices is...
Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
14 Jan 2008 | | Contributor(s):: Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step...