Tags: nanoelectronics

Description

This list is a starting point for nanoHUB users interested in the broad area of nanoelectronics. It is a comprehensive list of available resources. More information on Nanoelectronics can be found here.

Online Presentations (21-40 of 1073)

  1. nanoHUB.org: Immersive Online Semiconductor Education and Workforce Development with Broad Academic Adoption

    Online Presentations | 02 Feb 2022 | Contributor(s):: Gerhard Klimeck, Daniel Mejia, Alejandro Strachan, Lynn Zentner, Michael Zentner

    Over 150,000 nanoHUB users have run over 7 million simulations in browsers. Most nanoHUB apps deal with semiconductor device and materials modeling. These apps provide very simple and intuitive interfaces to community codes that are hard to install, operate, and to maintain even for experts. As...

  2. ABACUS MOS Capacitors (Winter 2021)

    Online Presentations | 31 Jan 2022 | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  3. ABACUS Bipolar Junction Transistors (Winter 2021)

    Online Presentations | 25 Jan 2022 | Contributor(s):: Gerhard Klimeck

    In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...

  4. ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)

    Online Presentations | 19 Jan 2022 | Contributor(s):: Gerhard Klimeck

    In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...

  5. ABACUS Bandstructure Models (Winter 2021)

    Online Presentations | 21 Dec 2021 | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...

  6. ABACUS PN Junctions (Winter 2021)

    Online Presentations | 13 Dec 2021 | Contributor(s):: Gerhard Klimeck

    In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias...

  7. ABACUS Overview and Crystal Structures (Winter 2021)

    Online Presentations | 08 Dec 2021 | Contributor(s):: Gerhard Klimeck

    In the first session, Dr. Klimeck will briefly overview ABACUS and demonstrate the crystal viewer tool. With crystal viewer, students can start with the visualization of a standard Silicon textbook unit cell, then expand the view to a larger crystal and immerse themselves into the various...

  8. Purdue Microelectronics and Nanotechnology Overview

    Online Presentations | 09 Sep 2021 | Contributor(s):: Samantha Nelson, Muhammad A. Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye

    In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...

  9. IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys

    Online Presentations | 25 Jul 2021 | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth

    In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.

  10. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    Online Presentations | 15 Jul 2021 | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  11. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

    Online Presentations | 15 Jul 2021 | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

    In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

  12. IWCN 2021: Quantum Transport Simulation on 2D Ferroelectric Tunnel Junctions

    Online Presentations | 15 Jul 2021 | Contributor(s):: Eunyeong Yang, Jiwon Chang

    In this work, we consider a simple asymmetric structure of metal-ferroelectric-metal (MFM) FTJs with two different ferroelectric materials, Hf0.5Zr0.5O2(HZO) and CuInP2S6(CIPS), respectively. To investigate the performance of FTJs theoretically, we first explore complex band structures of HZO...

  13. IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels

    Online Presentations | 15 Jul 2021 | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou

    In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.

  14. IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method

    Online Presentations | 15 Jul 2021 | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...

  15. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

    Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

  16. IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices

    Online Presentations | 14 Jul 2021 | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick

    The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...

  17. IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials

    Online Presentations | 14 Jul 2021 | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis

    In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).

  18. IWCN 2021: Recursive Open Boundary and Interfaces Method for Material Property Predictions

    Online Presentations | 14 Jul 2021 | Contributor(s):: James Charles, Sabre Kais, Tillmann Christoph Kubis

    In this presentation, we show that assuming periodicity elevates a small perturbation of a periodic cell into a strong impact on the material property prediction. Periodic boundary conditions can be applied on truly periodic systems only. More general systems should apply an open boundary...

  19. IWCN 2021: A Practical Peierls Phase Recipe for Periodic Atomistic Systems Under Magnetic Fields

    Online Presentations | 14 Jul 2021 | Contributor(s):: Alessandro Cresti

    In this contribution I will provide general ready-to-use formulas to determine Peierls phase factors that preserve the translation symmetry of any periodic quasi-one-dimensional or two-dimensional system under a homogeneous magnetic field.

  20. SimTools: Delivering Simulations in the Era of Abundant Data

    Online Presentations | 04 Jun 2021 | Contributor(s):: Alejandro Strachan

    This presentation introduces SimTool, a library that allows developers to create, publish, and share reproducible workflows with well-defined and verified inputs and outputs.