adding other material system such as InGaAs/AlAs would be fantastic
Through simulation, GaAs/AlGaAs material system is good in order to understand the physical phenomenon of quantum tunneling. However, it would be very interesting if pseudomorphic In0.53Ga0.47As/AlAs/InP resonant tunneling diode can be simulated using this NEGF tool. This material system is mature and superior in terms of higher current density and high peak-to-valley current ratio.
Gerhard Klimeck at on
I think this is critical for this tool as it shows real NEMO1D-like capabilities.
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