Si photodiode simulation
I have configured a simple circuit (using start and finish circuit statements) consisting of diode (photodiode), external R and C.
When I perform photogen analysis to this circuit and obtain the photodiode's frequency response, it seems that the external
C has no effect on the frequency response result whereas the effect of external R appears in the result as it generates a pole
in combination with the diode parasitic capacitance. Does anyone know why this external C is neglected in the simulation result?
Thank you in advance!