| Description: |
Zlatan Aksamija talks about:
Simulation of Thermal Effects in Semiconductor Devices
Thermal generation in MOSFETs is seen as the ultimate limit to scaling. Thermal management solutions such as heat sinks are not sufficient to deal with heat generation in future integrated circuits based on aggressively scaled silicon MOSFET devices. Future designs will require a multi-physics electro-thermal approach. This, in turn, requires us to understand phonon generation and transport in order to couple proven device simulation to thermal transport. We present results for a 50nm channel silicon MOSFET. We couple 3-dimensional Monte Carlo device simulation to Boltzmann Transport equation and Heat equation phonon transport and explore the effects of Joule heating in this device. We also examine non-equilibrium optical phonons and bottlenecks to thermal transport.
Healthy Refreshments.
Sponsored by Network for Computational Nanotechnology at Illinois and nanoHUB.org (NCN@Illinois)
-Nahil A. Sobh
NCN and nanoHUB.org Site-Lead
Lead Scientist
University of Illiinois at Urbana-Champaign
CEE, MechSE, NCSA, NCN, Beckman
1250 MNTL
office (217) 244 9481 |