nanoHUB-U: Principles of Electronic Nanobiosensors
ECE 695A Reliability Physics of Nanotransistors
ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom
nanoHUB-U: The Science, Art, and Practice of Analyzing Experimental Data and Designing Experiments
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From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World
Online Presentations | 02 Feb 2023 | Contributor(s): Muhammad A. Alam
The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.
The Transistor at 75
Series | 02 Feb 2023 | Contributor(s): Mark Lundstrom, Michael J. Manfra, Muhammad A. Alam, Ekaterina Babintseva
Purdue celebrates the 75th anniversary of the invention of the transistor.
Purdue Microelectronics and Nanotechnology Overview
Online Presentations | 09 Sep 2021 | Contributor(s): Samantha Nelson, Muhammad A. Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye
In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...
Only Physics can save Machine Learning!
Online Presentations | 13 Oct 2020 | Contributor(s): Muhammad A. Alam
FeFET Memory Window Analytical Calculator
Downloads | 16 Dec 2019 | Contributor(s): Nicolo Zagni, Paolo Pavan, Muhammad A. Alam
This code computes the Memory Window of a FeFET by using the Landau-Devonshire theory. The aim of this code is to illustrate: the derivation of the switching conditions the trends of MW scaling with ferroelectric thickness the design constraints to guarantee hysteresis the effect of...
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A Verilog-A Compact Model for Negative Capacitance FET
09 Nov 2017 | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z
The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
09 Nov 2017 | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3VQ2SC7Q
Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)
04 May 2017 | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3862BC8C
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.
Purdue Solar Cell Model (PSM) - HIT
04 May 2017 | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3CV4BS80
Purdue Solar Cell Model (PSM) - Si
04 May 2017 | Contributor(s): Mark Lundstrom, Muhammad A. Alam, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Xingshu Sun | doi:10.4231/D3HM52M18
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for c-Si solar cells.