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Yaksh Dipak Rawal
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address1: Department of Technical Physics, Julius Maximillians University of Wuerzburg address2: Am Hubland city: Wuerzburg postal: 97074 region: Bavaria country: DE
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BiographyYaksh is originally from India, where in 2008, he received his Bachelor of Engineering (B.E.) in Electronics from Mumbai University, Mumbai, India. In the year 2010, his interest in microelectronics and semiconductor devices led him to join as project research assistant at Indian Institute of Technology Bombay, Mumbai, India. In 2011, he joined Indian Institute of Technology Bombay as full-time masters student where he worked on fabrication and characterization of metal-insulator-metal tunnel diodes for energy harvesting. After receiving his Master of Technology (M.Tech) in Microelectronics in 2014, he joined again as project research assistant where he worked on contact resistivity reduction for n-Ge source/drain using novel techniques. He has also been teaching assitant at Indian Institute of Technology for courses Solid State Devices, Physics of Transistors, Microelectronics Lab and Electronics Devices and Circuits. During his 5 years(2010-2015) at Indian Institute of Technology, Bombay, he has mentored one graduate student working on MIM capacitors, one intern and one undergraduate student working on Memristor and one undergraduate student working on dielectric constant measurement through capacitance sensing in microuidic channels. In the year 2015-2017, he was employed as Senior Engineer, Integration and Yield, 14nm FinFET group at GlobalFoundries Engineering Private Limited, Bangalore. Working at the forefront of driving yield improvement and product performance during ramp up of advanced technology nodes, 14LPP and 14LPE on GLOBALFOUNDRIES' strategic roadmap. He supported ramp up of these technologies in the new Fab 8 in Malta, NY from GLOBALFOUNDRIES' India centre at Bangalore. He achieved this by monitoring the baseline trends, device parametrics (HOL, FEOL and BEOL) and inline meterology parameters. His main area of focus is on the baseline monitoring and datamining for FEOL parameters.
Currently employed at JMU Wuerzburg as Ph.D student where he'll be working on the design, fabrication (epitaxial growth and nano-structuring) and characterization of resonant tunneling structures in the InAs and antimonide material system on InAs and GaSb-substrates. Electrical transport measurements will be conducted to characterize the electrical performance of the grown resonant tunneling structures as high-speed and MIR optoelectronic devices.
https://www.gla.ac.uk/research/az/teraapps/team/earlystageresearchersesr/#/esr3yakshrawal