Engineered Defects in Wide Band-gap Semiconductors for Single-spin Sensing and Computation
26 Mar 2014 | Online Presentations | Contributor(s): Abram Falk
Using infrared light at near-telecom wavelengths, I will show that spin states in silicon carbide exhibit long quantum coherence times that persist up to room temperature. I will also discuss new strategies for generating coherent spin interactions at the nanoscale using defects in inequivalent lattice sites (Fig. 1), as well as resonant electric and strain fields. Together with the availability of industrial scale crystal growth and advanced microfabrication, wide-gap semiconductors are promising platforms for room-temperature quantum technologies that merge spin degrees of freedom with electronics and photonics.