Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge, Massachusetts). After joining IBM in 2003, he has worked on SOI device design that has resulted in the successful deployment of 65-nm and 45-nm technology nodes. Since early 2010 his focus is on 22-nm technology. He has over 30 technical publications and 4 patents and is a senior member of the IEEE.