MOSCNT: code for carbon nanotube transistor simulation
Citations Non-affiliated (8) | Affiliated (0)
Non-affiliated authors
- S.G. Shirazi, GR Karimi, S. Mirzakuchaki, (2019), "GAA CNT TFETs Structural Engineering: A Higher ON Current, Lower Ambipolarity", IEEE Transactions on Electron Devices, IEEE, 66, 6: pg: 1-9, 0018-9383, (DOI: 10.1109/TED.2019.2912950)
- Mohammad Pivezhandi, Kambiz Abedi, Alireza Hassanzadeh, (2017), "Accuracy Improvement With Reliable Statistical-based Models For CNT-FET Applications", J Comput Electron, 16: pg: 610-619, (DOI: 10.1007/s10825-017-1026-3)
- Vishesh Dokania, Aminul Islam, Vivek Dixit, Shree Tiwari, (2016), "Analytical Modeling Of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances And Density Of States", IEE Transactions on Electron Devices, : pg: 1-6, 0018-9383, (DOI: 10.1109/TED.2016.2581119)
- H. Wang, (2016), "Carbon Nanotube TFETs: Structure Optimization With Numerical Simulation", Tunneling Field Effect Transistor Technology, : pg: 181-210, 978-3-319-31651-2, (DOI: 10.1007/978-3-319-31653-6_7)
- Shaahin Shirazi, Sattar Mirzakuchaki, (2013), "Performance Dependency On Doping Level Of Carbon Nanotube For Ballistic CNTFETs", EPL \Europhysics Letters), IOP Publishing, 103, 6: pg: -, (DOI: 10.1209/0295-5075/103/68009)
- Shaahin Shirazi, Sattar Mirzakuchaki, (2013), "High On/off Current Ratio In Ballistic CNTFETs Based On Tuning The Gate Insulator Parameters For Different Ambient Temperatures", Applied Physics A: Materials Science & Processing, Springer, 113, 2: pg: 1-31, (DOI: 10.1007/s00339-012-7543-9)
- Reza Yousefi, SEYYED GHOREISHI, (2012), "Numerical Study of Ohmic-Schottky Carbon nanotube Field Effect Transistor", Modern Physics Letters B, 26, 15: pg: 1250096-1-1250096-9, (DOI: 10.1142/S0217984912500960)
- Mohsen Hayati, Abbas Rezaei, Majid Seifi, (2009), "CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits", Electronics, Elsevier, 54, 1: pg: 52-57, 09, 0038-1101, (DOI: 10.1016/j.sse.2009.09.027)