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Multi-gate Nanowire FET

By Mincheol Shin

KAIST, Daejeon, Korea

3D simulator for silicon nanowire field effect transistors with multiple gates

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Version 1.6 - published on 08 May 2008

DOI: 10254/nanohub-r2704.7 cite this

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Usage

Table 1: Overview
Item Average Total
Simulation Users: - 392
Interactive Sessions: - 2,131
Simulation Sessions: - 3,793
Simulation Runs: - 8,862
Wall Clock Time: 10.33 hours 1631.91 days
CPU time: 3.81 hours 602.51 days
Interaction Time: 1 hours 158.7 days

Table 2: Users By Organization Type
# Type Users Percent
1 Educational - University 356 90.82
2 Unidentified 14 3.57
3 National Lab 11 2.81
4 Industry 8 2.04
5 Unemployed 3 0.77
6 Educational - Pre-College 3 0.77
7 Government Agency 2 0.51
Total Users 392 100
Table 3: Users by Country of Residence
# Country Users Percent
1 UNITED STATES 140 35.71
2 INDIA 52 13.27
3 TAIWAN 25 6.38
4 KOREA, REPUBLIC OF 19 4.85
5 CHINA 15 3.83
6 UNITED KINGDOM 11 2.81
7 GERMANY 10 2.55
8 CANADA 7 1.79
9 IRAN, ISLAMIC REPUBLIC OF 7 1.79
10 FRANCE 7 1.79
Total Users 392 100
Table 4: Top Domains by User Count
# Domains Users Percent
1 Unidentified 142 36.22
2 purdue.edu 21 5.36
3 comcast.net 21 5.36
4 nctu.edu.tw 17 4.34
5 rr.com 12 3.06
6 uc.edu 9 2.3
7 verizon.net 9 2.3
8 insightbb.com 7 1.79
9 berkeley.edu 6 1.53
10 hinet.net 6 1.53
Total Users 392 100

Location of all "Multi-gate Nanowire FET" Users Since Its Posting

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