Carrier Statistics Lab

Calculate the carrier density

Launch Tool

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Archive Version 1.0
Published on 22 Jan 2008, unpublished on 24 Jan 2008
Latest version: 2.3. All versions

doi:10.4231/D3610VR4G cite this

This tool is closed source.

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Abstract

This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, densisty of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature.

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

Credits

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

Sponsored by

NCN@Purdue

References

Semiconductor Device Fundamentals , Robert Pierret
Physics of Semiconductor Devices, S M Sze

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck, Saumitra Raj Mehrotra, Abhijeet Paul (2014), "Carrier Statistics Lab," https://nanohub.org/resources/fermi. (DOI: 10.4231/D3610VR4G).

    BibTex | EndNote

Tags

  1. Carrier density
  2. DOS
  3. Maxwell Boltzmann
  4. nanoelectronics
  5. NCN@Purdue Supported