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Analytic Spin Precession Simulator
Simulate spin precession effect in pure silicon
Version 1.101 - published on 20 Oct 2014
doi:10.4231/D3SF2MC78 cite this
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Abstract
Spin precession and dephasing (``Hanle effect'') provides an umbiguous means to establish the presence of spin transport in semiconductors. Analytic spin precession simulator simulates ``Hanle effect'' in linear band pure silicon spin transport device with the presence of a perpendicular magnetic field.
Spin diffusion-drift equation is used to provide an analytical transit time distribution of electrons. Final signal received at detector side is plotted as a function of perpendicular magnetic field intensity. Use this tool to understand the effects of oblique magnetization, injector/detector magnetization flipping and tilting on spin precession.
Credits
Analytic spin precession simulator has been developed by Appelbaum Lab at University of Delaware, Newark, DE.
Sponsored by
DARPA/MTO and ONR.
References
Ian Appelbaum, Biqin Huang, and Douwe J. Monsma, "Electronic measurement and control of spin transport in silicon", Nature 447, 295 (2007).
Jing Li, Biqin Huang, and Ian Appelbaum, "Oblique Hanle Effect in Semiconductor Spin Transport Devices", Appl. Phys. Lett. 92, 142507 (2008).
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