Tags: device modelling and simulation

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  1. Manish Tiwari

    I have done my bachelors in Electronics, nd masters in nanotechnology, n m currntly pursuing my phd in nanoelectronics.

    https://nanohub.org/members/94216

  2. [Illinois] Interdisciplinary Symposium on Advanced Nano/Biosystems (Design, Fabrication, and Characterization)

    17 Dec 2013 |

    Symposium Dates and LocationWednesday, September 25-Friday, September 27, 2013Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-ChampaignUrbana, Illinois, USA  Program  Symposium Focus:Nano/bio systems have...

  3. Radha Krishnan

    https://nanohub.org/members/92862

  4. GOVARTHANAN V

    https://nanohub.org/members/92459

  5. Zhichao Yang

    https://nanohub.org/members/89859

  6. Ali Aldubaisi

    https://nanohub.org/members/88716

  7. MUHAMMAD JOHIRUL ISLAM

    https://nanohub.org/members/87722

  8. bahram ganjipour

    https://nanohub.org/members/86343

  9. Long xiang Yin

    https://nanohub.org/members/84919

  10. SPICE Model of Graphene Nanoribbon FETs (GNRFET)

    12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

    This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...

  11. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  12. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  13. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  14. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

  15. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

  16. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  17. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  18. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  19. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...