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Moore's Law and Radiation Effects on Microelectronics
03 Oct 2023 | | Contributor(s):: Daniel M. Fleetwood
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MuGFET
17 Jan 2008 | | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
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MuGFET: First-Time User Guide
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
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nanoHUB MuGFET Tool Tutorial
04 Mar 2021 | | Contributor(s):: Ashish anil Bait
This is a basic tutorial on how to use the nanohub MuGFET tool to simulate FinFET or double gate model free of cost.
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Neilalohith Sharma
https://nanohub.org/members/257041
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Pankaj Kumar Pal
Hi, I am Pankaj Kumar Pal, received my B.Tech. degree in Electronics and Communication Engineering from Gurukul Kangri University, in 2008, M.Tech. degree in VLSI design from NIT-Hamirpur in 2010...
https://nanohub.org/members/82565
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Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
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Radiation Enabled Model Development and Validation
08 Mar 2024 | | Contributor(s):: Jeffrey S. Kauppila
This lecture will discuss techniques and methods for modeling single-event radiation effects at the transistor and circuit level. The lecture will also cover topics related to the validation of models using test data from custom on-chip measurement techniques developed over the last decade.
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SCALE Ion-Induced Stuck Bits in 5 nm Bulk FinFET SRAMs at High Fluences
19 Sep 2023 | | Contributor(s):: Yoni Xiong
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SCALE Total Ionizing Dose Response Mechanisms in a 12-nm FinFET Technology
21 Feb 2024 | | Contributor(s):: Hugh Barnaby
This talk was also presented at the 2024 Microelectronics Reliability and Qualification Workshop, The Aerospace Corporation, El Segundo, CA, February, 6, 2024.
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Short Course on FinFET Simulation using MuGFET
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
This short course present how to use nanohub MuGFET tool to simulate FinFET or double gate model. It provides a short background on FinFET followed by instructions on how to use the MuGFET tool for the FinFET simulation.
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Siratun Nabi Sirat
https://nanohub.org/members/186995
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Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential....
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Technology Characterization and Radiation-Enabled Modeling
03 Apr 2024 | | Contributor(s):: Jeffrey S. Kauppila
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Vivek Asthana
https://nanohub.org/members/49925