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Tags: GaAs

Resources (1-15 of 15)

  1. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...

    http://nanohub.org/resources/16192

  2. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...

    http://nanohub.org/resources/10199

  3. Comparison of PCPBT Lab and Periodic Potential Lab

    10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...

    http://nanohub.org/resources/7201

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