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Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy
26 May 2017 | Online Presentations | Contributor(s): Geoff Gardner
In this talk I detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that...
Epitaxial Strategies for High Power Optically Pumped Vertical External Cavity Surface Emitting Lasers and Metamorphic Antimonide Solar Cells
05 Dec 2016 | Online Presentations | Contributor(s): Ganesh Balakrishnan
We present antimonide-based photovoltaic cells grown on GaAs and Silicon substrates for use as sub-cells in metamorphic multi-junction solar cells. These antimonide cells, based on GaSb, are...
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...
Comparison of PCPBT Lab and Periodic Potential Lab
10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng
This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...